Evaluate film thickness, density, and bonding state.
SiC power devices are expected to reduce power loss and handle large power in a compact form as power conversion elements. We will introduce a case where the thickness and density of the gate oxide film, necessary for improving the characteristics of the device, were evaluated using XRR (X-ray reflectivity) and the bonding state was assessed using XPS (X-ray photoelectron spectroscopy).
Inquire About This Product
basic information
For detailed data, please refer to the catalog.
Price information
-
Delivery Time
Applications/Examples of results
Analysis of power devices.
catalog（1）
Download All Catalogs![[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate_C0281](https://image.mono.ipros.com/public/catalog/image/01/912/334710/IPROS6253915519104732463.jpg?w=120&h=170)
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!