Identification of the interface between contact electrodes and SiC layer, and evaluation of elemental distribution.
We will introduce an analysis case of commercially available SiC power MOSFET devices. In SiC materials, it is essential to control the materials in a system that includes not only Si but also C, which differs from the conventional manufacturing methods of Si semiconductors. In the process of forming ohmic junctions between the contact electrodes and the SiC layer, we evaluated the elemental distribution and crystal phases, including C, using EDX/EELS analysis with TEM and electron diffraction.
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Analysis of power devices.
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Download All Catalogs![[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFET_C0292](https://image.mono.ipros.com/public/catalog/image/01/c6b/334953/IPROS6627451355380541794.jpg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
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