Evaluation of valence, coordination number, and structural order of metal elements in oxide semiconductors.
The IGZO thin film, a transparent oxide semiconductor, is being researched and developed as a TFT material for displays; however, there are still challenges regarding the stability of TFT characteristics for practical use. To address this issue, it is important to elucidate the IGZO film formation mechanism. By clarifying the electronic states of metal elements and their local structures in IGZO thin films through XAFS analysis using synchrotron radiation, it is possible to gain insights into the IGZO film formation mechanism. This paper presents a case study of local structure analysis of IGZO thin films using Zn-K edge XAFS spectra.
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Analysis of oxide semiconductors.
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