[Analysis Case] Evaluation of Metal Element Concentration Near the Surface of Gallium Oxide Ga2O3 Film
High sensitivity analysis even in extremely shallow areas.
Gallium oxide (Ga2O3) has a wider bandgap than SiC and GaN, and possesses excellent physical properties, making it a material of interest for high-efficiency, low-cost power devices. Controlling the impurity concentration, which affects the characteristics, is crucial in wafer development. This document presents a case study of quantitative analysis of metal elements in the vicinity of Ga2O3 films. TOF-SIMS allows for highly sensitive evaluation even in very shallow regions.
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Analysis of oxide semiconductors and power devices.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!