We will advance the high current drive of the developed device and aim for commercialization starting in the fiscal year 2021.
This technical document covers the "Ultra-Low Loss Gallium Oxide Schottky Barrier Diode." Our company has successfully reduced forward loss by up to 40% compared to commercially available SiC Schottky diodes. We are advancing the development of high-current drive devices, aiming for commercialization starting in the fiscal year 2021. We also introduce the "Gallium Oxide Trench MOSFET." [Contents] ■ Ultra-Low Loss Gallium Oxide Schottky Barrier Diode ■ Gallium Oxide Trench MOSFET *For more details, please refer to the PDF document or feel free to contact us.
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**Our Achievements** ■ Ultra-Low Loss Gallium Oxide Schottky Barrier Diode - Successfully reduced forward loss by up to 40% compared to commercially available SiC Schottky diodes. ■ Gallium Oxide Trench MOSFET - Successfully demonstrated the operation of low-loss trench MOS-type power transistors using gallium oxide homoepitaxial films. *For more details, please refer to the PDF document or feel free to contact us.*
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Novel Crystal Technology Co., Ltd. is a venture company that was established as a spin-off from Tamura Manufacturing Co., Ltd. With the concept of "A new future of living opened by new materials," we are working to promote the new material "gallium oxide" to the world.