High-efficiency, high-voltage GaN switch reduces the effort and time required for research and development.
The product from Infineon Technologies drives GaN HEMTs using high-efficiency commercially available single-channel isolated Gallium Nitride (GaN) EiceDRIVER ICs. CoolGaN enhancement mode HEMTs can achieve optimal driving by using Infineon's EiceDRIVER ICs: 1EDF5673K, 1EDF5673F, and 1EDS5663H. 【Features】 ■ Low resistance output source: 0.85Ω, sink: 0.35Ω <Single-channel galvanic isolation> ■ Functional isolation: VIO= 1500VPC ・VIOWM = 510Vrms (16-pin DSO) ・VIOWM = 460Vrms (LGA 5x5) ■ Reinforced isolation ・VIOTM = 8000Vpk (VDE 0884-10 undecided) ・VIOWM = 1420 VDC ■ Minimum common-mode transient immunity (CMTI): 200V/ns ■ Timing ・Minimum output pulse width: 18ns ・Propagation delay accuracy: 13ns *For more details, please refer to the PDF document or feel free to contact us.
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【Other Features】 ■ Positive and negative gate drive current: High-speed turn-on/off GaN switch slew rate ■ Holds gate voltage at zero during the off period ■ Built-in galvanic isolation *For more details, please refer to the PDF document or feel free to contact us.
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【Applications】 ■ Server ■ Telecom DC/DC ■ Data Communication ■ Adapter ■ Charger ■ Wireless Charger ■ SMPS *For more details, please refer to the PDF document or feel free to contact us.
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Our company was founded in 1968 and has been involved in the sale of electronic components as well as the development of various electronic devices. At Asahi Tech, we continue our efforts in all aspects of development, including cost, quality, marketing, sales, and distribution efficiency, without ever becoming complacent, and we will keep accelerating our momentum. With excellent technical capabilities and a unique perspective that responds to the information age, we aim to be a one-of-a-kind company that contributes to society through the proposal and development of unique products as a trading company with manufacturing functions. Tokyo Branch: Tel: 03-3835-4881 / Fax: 03-3832-4016