Quantitative analysis of c-Si and a-Si by state is possible using high-resolution measurement and waveform analysis.
In the semiconductor manufacturing process, ion irradiation is sometimes performed for the purpose of surface modification. It is known that irradiating the surface of single-crystal Si with ions of inert elements can cause structural damage and lead to the formation of an amorphous layer. Utilizing the fact that high-resolution XPS spectra detect c (single-crystal) Si and a (amorphous) Si with different peak shapes, we will introduce a case where this damage-derived a-Si was separated from c-Si and quantitatively evaluated.
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For detailed data, please refer to the catalog.
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Analysis of LSI, memory, and electronic components.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!