[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls
Quantitative evaluation of the roughness of trench sidewalls related to device characteristics.
In recent years, SiC has been attracting attention as a material for high-voltage devices. The trench MOSFET structure is necessary for the high integration of devices, and the application development for SiC devices is progressing. Since the channel region of the trench MOSFET structure is the trench sidewall, the flatness of the trench sidewall is related to the reliability of the device. This document introduces an example of quantitatively evaluating the roughness of the trench sidewall of SiC trench MOSFETs using AFM (Atomic Force Microscopy).
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Analysis of power devices.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!