You can evaluate the p/n polarity and carrier concentration distribution of the diffusion layer in SiC devices.
In recent years, SiC has attracted attention as a material for high-voltage devices. The trench MOSFET structure allows for high integration of the elements, and applications for SiC devices are also being advanced. On the other hand, there are challenges regarding the dopant activation rate of SiC devices, making performance evaluation important. In this instance, we will introduce a case where carrier polarity determination was conducted using SNDM (Scanning Nonlinear Dielectric Microscopy) and carrier concentration distribution was evaluated using SMM (Scanning Microwave Microscopy) for SiC trench MOSFETs.
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For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of power devices.
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Download All Catalogs![[Analysis Case] Evaluation of the Diffusion Layer of SiC_Trench_MOSFET by SMM and SNDM_C0556](https://image.mono.ipros.com/public/catalog/image/01/746/458122/IPROS08351724751273259074.jpeg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
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