A detailed explanation of the old yet new "Novolak resin," which is still widely used.
Semiconductors and liquid crystal devices are manufactured by repeating the lithography process multiple times. During these dozens of repetitions, the need for cutting-edge fine patterns is limited to a few processes, such as the gate process, while the majority uses thicker line width patterns. Novolak resist is used for these thick patterns. Of course, depending on the device, chemical amplification resist for KrF (248 nm) may also be used here. Therefore, in semiconductor devices, while not all processes use thick line widths, novolak resist is still used, and in considerable amounts. Additionally, in emerging countries like China, semiconductor device manufacturing involves producing older generation devices, where novolak resist is naturally used. Furthermore, in liquid crystal manufacturing, novolak resist is used in all processes (5 processes). There seem to be device manufacturers that use 4 processes due to the use of halftone masks. The introduction of chemical amplification resist, which is high sensitivity and high resolution, is also being considered, but practical application has not been achieved due to the significantly larger substrate sizes compared to semiconductors and the difficulty in controlling the usage environment.
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Published on January 14, 2020 A4 size, paperback, 191 pages <br> <Authors> Hideo Horibe / Osaka City University Hatsuyuki Tanaka / Merck Performance Materials Co., Ltd. Makoto Hanabata / Visiting Professor, Osaka City University Masafumi Yamamoto / Kagawa National College of Technology Jun Sekiguchi / Visiting Professor, Ritsumeikan University Shuichi Toratani / Toray Research Center, Inc. Norihiro Mochizuki / Toray Research Center, Inc. Naoki Ban / Toray Research Center, Inc.
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45,000 yen Plus consumption tax *With CD-R is 55,000 yen + consumption tax
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<Table of Contents> Chapter 1: Introduction Chapter 2: Overview of G-Line Novolak Resist Chapter 3: Overview of I-Line Novolak Resist Chapter 4: Material Development of Novolak Resist Section 1: Influence of Molecular Weight Distribution Section 2: Influence of Photosensitizer Amount Section 3: Influence of Prebake Temperature Section 4: Influence of Development Temperature Section 5: Tandem Structure of Molecular Weight Distribution and High Resolution (1) Section 6: Tandem Structure of Molecular Weight Distribution and High Resolution (2) Chapter 5: Analytical Techniques for Novolak Resist Section 1: Organic Composition Analysis of Novolak Positive Resists Section 2: Molecular Weight Distribution Measurement by GPC Method Section 3: Analysis of Resist Films Section 4: Analysis of Novolak Resist Using Lithography Simulation Chapter 6: Resist Stripping Techniques Chapter 7: Applications and Troubleshooting of Novolak Resist Chapter 8: Conclusion
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