[Example] Particle-PLUS 2 Frequency CCP

basic information

**Features** - The time scheme uses an implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*

Price range

Delivery Time

P4

Applications/Examples of results

【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and realistically - Calculations are relatively stable to avoid applying unreasonable voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage for efficient material sputtering 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - Enables observation of physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and the damage to the chamber walls - Changing calculation conditions allows for optimization of high-density plasma generation at low power

Detailed information

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  Time evolution of plasma particle number

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  Time evolution of accumulated charge on the electrode and dielectric surface.

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  Time evolution of electrode potential

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  Time evolution of J・E and J・dD/dt

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  Electron density distribution of RF cycle average in steady state.

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  Ar+ ion density distribution averaged over RF cycles in a steady state.

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  Potential distribution of RF cycle average in steady state.

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  Electron temperature distribution of the RF cycle average in a steady state.

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  Distribution of the RF cycle-averaged Ar+ ion flux on the HFE and LFE electrode surfaces in a steady state.