We provide custom structure MBE/MOCVD epitaxial growth on compound semiconductor epitaxial InP substrates.
We provide custom structure MOCVD epitaxial growth on InP substrates ranging from 2 inches to 4 inches. We offer comprehensive services for InP epitaxial substrates to companies, universities, and scientific research institutions, including epitaxial structure design, epitaxial materials, and testing analysis.
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basic information
◆FP Laser Wavelength range (~1310nm; ~1550nm; ~1900nm) ◆DFB Laser Wavelength range (1270~1630nm) ◆Avalanche Photodetector (APD) Wavelength range (1250~1600nm) ◆Photodetector (PD) Wavelength range (1250nm~1600nm) >2.0um (InGaAS absorption layer); <1.4μm (InGaAsP absorption layer)
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Applications/Examples of results
◆FP Laser ◆DFB Laser ◆Avalanche Photodetector (APD) ◆Photodetector (PD)
Company information
Introducing semiconductor products from Russia, South Korea, and China.
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