[Example] Mass analysis of the "Particle-PLUS" ion beam.

basic information

**Features** - The time scheme uses an implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the above plasma module, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*

Price range

Delivery Time

P4

Applications/Examples of results

【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - Enables observation of physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of films and damage to chamber walls - Changing calculation conditions allows for optimization of high-density plasma generation at low power

Detailed information

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  Ion beam It shows the obtainable ion beam. The ion beam in the figure does not represent the calculation results, but it is possible to calculate interactions between ions and matter using the ion beam from the above calculation results.

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  Ion Accelerator The figure shows the simulation results of ions accelerating each time they pass through a ring with applied voltage. The contour map indicates the energy of the ions. Generally, ions accelerate due to the magnitude of the potential difference, and the energy of ions that pass through a -50 eV link reaches 50 keV.

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  Ion Analysis Device The figure shows the results of simulating ions moving in a uniform magnetic field within the ion analysis device by calculating their trajectories. The contour map indicates the density distribution of each ion. Here, we assume the extraction of carbon ions. Beryllium, which is lighter than carbon, bends significantly due to the magnetic field, while magnesium, which is heavier than carbon, bends less than carbon.