[Case Study] Plasma Analysis of "Particle-PLUS" Dual Frequency CCP

basic information

**Features** - The time scheme uses an implicit method, allowing for stable time evolution to be calculated over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the above plasma module, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas, such as the flux distribution on opposing substrates, which can be evaluated in a short time. *For other functions and details, please feel free to contact us.*

Price range

Delivery Time

P4

Applications/Examples of results

【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and realistically - Calculations are relatively stable to avoid applying unreasonable voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - By changing calculation conditions, optimization of high-density plasma generation at low power is possible

Detailed information

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  This is a case study on plasma analysis of CCP (Capacitively Coupled Plasma) devices. Particle-PLUS specializes in plasma analysis within vacuum chambers and can perform high-speed simulations even in cases with multiple electrodes or when applying superimposed frequencies.

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  ◇Model Overview Conducted plasma analysis of 2-frequency CCP using an axisymmetric model.

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  Electric potential - Since the electron speed is significantly faster than the ion speed, ions are left behind in the plasma, resulting in a slight positive charge in the plasma. - Due to the self-bias effect, the electrodes are negatively charged. The high-frequency side has a self-bias of about -20 V, while the low-frequency side has a self-bias of about -150 V.

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  Transition of Particles - Change in particle number over time: It reaches a steady state in about 1×10^(−5) seconds, achieving a balance between the generation and annihilation of plasma particles. - Time variation of accumulated charge: It can be inferred that ions are left behind in the chamber, causing the plasma charge to be positively biased.

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  Particle number density Electron number density (periodic average) Ar ion number density (periodic average)

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  Ar ion flux Ar ion number flux (time-averaged) Ar ion energy flux (time-averaged) In Particle-PLUS, these flux distributions can be used to calculate the sputtering phenomenon.