Introduction of Particle-PLUS Analysis Case: "RF Magnetron Sputtering Analysis of Dielectric Target" Simulation Case
This is an analysis case of RF magnetron sputtering, which is one of the film deposition methods using process plasma. Particle-PLUS specializes in plasma analysis within vacuum chambers and can quickly simulate deposition rates and other parameters. ◇ Features of 'Particle-PLUS' - Excels in low-pressure plasma analysis. - By combining axisymmetric models with mirror-symmetric boundary conditions, it can obtain results quickly without the need for full device simulations. - Specializes in plasma simulations in low-pressure gases, where fluid modeling is challenging. - Supports 2D (two-dimensional) and 3D (three-dimensional) analyses, efficiently handling complex models. - As a strength of our in-house developed software, customization to fit customer equipment is also possible. ◆ Various calculation results can be output ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the walls - Energy spectrum of electrons and ions at the walls - Density distribution/temperature distribution/velocity distribution of neutral gas and more. *Please feel free to contact us for more details.
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basic information
**Features** - The time scheme uses an implicit method, allowing for stable time evolution with a large calculation time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in devices such as magnetron sputtering systems, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*
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P4
Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage for efficient material sputtering 【Ion Implantation】 - Influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - Enables observation of physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By examining electron density and ion velocity distribution, it is possible to investigate the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for optimization of high-density plasma generation at low power
Detailed information
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Introduction to Particle-PLUS Analysis Examples RF Magnetron Sputtering of Dielectric Targets
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◇Model Overview Analysis case of RF magnetron sputtering of dielectric targets in an axisymmetric model.
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Neutral gas pressure and static magnetic field - Ar pressure - Magnetic flux density
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Electric potential and electron number density - Electric potential (periodic average) - Electron number density (periodic average)
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Ion energy - Ar+ ion energy - Ar+ ion incident energy flux
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Sputtering and film formation - Number density (color display) and flow rate (arrow display) - Deposition rate on the substrate surface - Erosion rate on the target surface
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