It is a furnace with a movable body that can easily obtain crystals with few defects (EPD).
The "MAT-200VGFHQ" is a VGF manufacturing furnace with a quartz tube-type movable furnace structure. Since it grows under an arsenic pressure of 1 atm, it is possible to obtain crystals with few defects (EPD) easily. The operating temperature is 1200°C, and the maximum temperature is 1300°C. Additionally, the GaAs ingot and PBN crucible can be separated by immersing them in liquid after growth. Furthermore, the PBN crucible and quartz ampoule can be reused. 【Features】 - The GaAs ingot and PBN crucible can be separated by immersing them in liquid after growth. - The PBN crucible and quartz ampoule can be reused. *For more details, please refer to the PDF document or feel free to contact us.
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【Specifications (Partial)】 ■ Furnace Structure: Quartz tube type, movable ■ Maximum Temperature: 1300℃ ■ Operating Temperature: 1200℃ ■ Temperature Distribution: Approximately 1200±2℃, about 200Lmm ■ Number of Zones: 6 zones ■ Movement Speed ・Low Speed: 0.1–10mm/h ・High Speed: 3–300mm/min ・Movement Distance: 1650mm ■ Inner Diameter of Furnace Core Tube: Quartz tube φ200mm for 6 inches ■ Atmosphere: Automatic vacuum replacement type with Ar gas ■ Vacuum Pump: Rotary pump, etc. *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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Our company is a furnace manufacturer specializing in crystal synthesis and thermal processing for research and development in compound semiconductors and electronic materials. We break away from traditional vertical organizations and are a nimble company that can quickly respond to customer needs. Based on our expertise in materials and extensive experience, we propose plans to create furnaces that truly meet our customers' requirements. Please feel free to contact us with any inquiries.