Structural and process analysis of GaN Systems' GaN power transistor "GS61008T-E01-MR"!
We provide the "Structural Analysis and Process Analysis Report for GaN Systems 100V GaN Transistor (GS61008T-E01-MR)." The structural analysis report clarifies the details of the GaN power transistor "GS61008T-E01-MR" from GaN Systems, while the process flow analysis report estimates the chip manufacturing process based on the results of the structural analysis. [Report Contents] ■ Structural Analysis Report - Package appearance, X-ray observation, chip plane analysis (wire connections, layout confirmation), chip cross-section analysis (GaN transistor, chip edge), GaN-Epi layer TEM-EDX analysis - Electrical characteristic measurements (Id-Vd, BVdss, capacitance characteristics) ■ Process Analysis Report - Extraction and estimation of manufacturing process flow, number of masks, process sequence cross-sectional diagram - Correlation analysis between electrical characteristics and device structure *For more details, please download the PDF or feel free to contact us.
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【Table of Contents】 ■Structural Analysis Report 1. Device Summary 2. Summary of Analysis Results 3. Package 4. Planar Structural Analysis 5. Cross-sectional SEM Structural Analysis 6. Cross-sectional TEM Structural Analysis 7. TEM-EDX Analysis 8. Electrical Characteristics Evaluation ■Process Analysis Report 1. GaN Systems GaN HEMT (GS61008T-E01-MR) 2. Summary of GS61008T-E01-MR Analysis Results 3. Process Flow 4. Electrical Characteristics Analysis 5. Related Literature Catalog *For more details, please download the PDF or feel free to contact us.
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Our company is a technology service provider that specializes in delivering technical information (reports) tailored to our customers' needs, utilizing both the semiconductor-based analysis technology we have developed over many years since 1988 and our extensive experience in the investigation and analysis of intellectual property (IP) such as patents.
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