The thickness of the silicon substrate is measured in real-time with high sensitivity and non-contact using a wavelength scanning method.
- Non-contact measurement of wafer thickness such as silicon and indium phosphide - Measurement possible in harsh environments, such as real-time measurement during wet etching - High sensitivity measurement with a precisely controlled wavelength-variable light source - High reproducibility with a measurement accuracy of less than 0.1μm - Customizable for measurement targets, sizes, and shapes other than silicon
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basic information
Overview of the Device Configuration - The wafer thickness measurement device consists of a precisely wavelength-controlled tunable light source, a focusing sensor, and a photodetector (PD). - The light from the focusing sensor is reflected off the surface and back surface of the measurement sample, and then passes through the focusing sensor again to generate interference waves at the PD.
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Applications/Examples of results
- Measurement of wafer thickness after polishing and post-process - Measurement of wafer thickness during the etching process
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Our company started in 1982 as a technical trading company specializing in the sales and maintenance services of semiconductor manufacturing equipment imported from overseas, as a group company of Kanematsu Corporation. Recently, in order to meet the diverse needs of our customers, we have been committed to ensuring that not only manufacturing equipment but also overseas products such as parts, materials, and subsystems can be used with confidence by our customers. While being a trading company, we have enhanced our technical department, which is responsible for planning, development, design, and manufacturing, to propose comprehensive technical solutions and expand our business globally to customers both domestically and internationally. In the future, we aim to continue being a company that provides new added value and services as an electronics technology trading company, growing together with our customers.