Developed 8M-bit FeRAM that guarantees 100 trillion write cycles! Achieves high-speed operation and low power consumption.
The "MB85R8M2TA" is a parallel interface FeRAM that operates with a wide range power supply voltage of 1.8V to 3.6V. It achieves approximately 30% faster access speed compared to our conventional products while reducing operating current by 10%, balancing high-speed operation with low power consumption. It is well-suited for industrial machinery that requires high-speed operation, where SRAM has been used until now. 【Features】 ■ High rewrite endurance (high number of guaranteed rewrite cycles) ■ High-speed writing ■ Low power consumption ■ Over 20 years of mass production experience *For more details, please refer to the PDF document or feel free to contact us.
Inquire About This Product
basic information
【Other Features】 ■ Operates with a wide range power supply voltage of 1.8V to 3.6V ■ Guarantees 100 trillion data rewrite cycles ■ Access speed operates at a maximum of 25ns by using high-speed page mode ■ Allows high-speed access equivalent to SRAM for continuous data transfers ■ Achieves high-speed operation while also reducing power consumption during operation ■ Operating current is a maximum of 18mA (10% reduction compared to conventional products) ■ Standby current is a maximum of 150µA (50% reduction) ■ Available in two types: 48-pin FBGA and 44-pin TSOP, which is easy to replace from the conventional 4M bit products ■ Customers using SRAM can benefit from reduced battery usage by adopting the new 8M bit FeRAM *For more details, please refer to the PDF document or feel free to contact us.
Price range
Delivery Time
Applications/Examples of results
【Usage Example】 ■Industrial Machinery *For more details, please refer to the PDF document or feel free to contact us.
Company information
Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.