Tohoku Univ. Technology：Synthesis method for position controllable transition metal dichalcogenide: T15-167
Avoid size dispersion, able to synthesize single crystal
Transition metal dichalcogenide (hereinafter “TMD”) is an atomic material layer with thickness of an atom, which has a bandgap in the visible range and behaves as a semiconductor. The conventional synthesis method is the chemical vapor deposition (CVD) where TMD is synthesized at random position on the circuit board. The position control of the synthesis is essential in order to apply TMD on different devices but the conventional synthesis method doesn’t allow that. The synthesis method with controlled position is also proposed but a polycrystalline TMD is synthesized and it is not convenient to apply to different devices. This invention solves above issues and can provide a synthesis method of monocrystalline TMD or heterojunction TMD by controlling its position using micro dots as a growing core while limiting the size dispersion.
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The revenue generated from technology transfer is reinvested as new research funding for universities and researchers, and is utilized to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will vigorously promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by signing basic technology transfer agreements with the following universities (as of June 1, 2025): Tohoku University, Hirosaki University, Iwate University, Akita University, Fukushima University, Yamagata University, Tohoku Gakuin University, Iwate Medical University, Fukushima Medical University, Aizu University, Miyagi University, Hokkaido University, Muroran Institute of Technology, and Showa Medical University.
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