Proposal for semiconductor manufacturing: We offer cost-effective materials as alternatives to traditional thick epitaxy and inverted epitaxy for IC and MEMS applications.
【SOI Wafer】: (Silicon-On-Insulator) We supply SOI wafers with a device layer of thick film of 100-200mm or thin film of less than 1um. Features: ■ Covers a wide range of fields such as optical engineering surface acoustic wave filters, including silicon wafers and thermal oxide films. ■ IceMOS provides world-class product quality while continuously improving through process management based on Six Sigma statistical control methods. ■ Offers sufficiently competitive costs and flexible responses. 【Silicon-Silicon Bonding】: Low leakage, high quality, minimal warping, and low defect density! Offered as a cost-effective material. Using direct wafer bonding technology, it is possible to create silicon substrates that include various single-crystal silicon. Resistance range: 1mΩ-cm to 10kΩ-cm Features: ■ N and P-type materials, orientation direction can be arranged. ■ Low leakage, high quality, minimal warping, low defect density. ■ Thickness variation < +/-0.5um. ■ Transition levels from high concentration to low concentration can be adjusted sharply or softly.
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basic information
Ice Moss has Silicon-Silicon and SOI wafers in stock in sizes of 100mm, 125mm, 150mm, and 200mm. You can check the currently available wafers at the following WEBSITE: https://jp.icemostech.com/inventory.html To confirm the full specifications, please click the blue download mark. The lead time is up to 7 business days from the receipt of the order. If you require additional processes, please let us know, and we will consider your desired processes. Belfast Factory: Delivered from an ISO9001, ISO14001, and IATF16949 certified factory. Transactions can be made in US dollars and Japanese yen.
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Applications/Examples of results
Silicon Silicon Bonded Wafer [Applications] ■ High Voltage PIN Diode ■ RF Attenuator ■ Optical Detector ■ X-ray Detector ■ IR Infrared Sensor ■ High Voltage Power Device ■ Replacement from Epitaxial Material SOI Wafer [Applications] ■ Advanced Pressure Sensor ■ Accelerometer ■ Gyroscope ■ Microfluidics/Flow Sensor ■ RF MEMS ■ Optical Micro Machines/Optical MEMS ■ Optoelectronics ■ Smart Power ■ Analog IC Technology ■ Microphone ■ Luxury Watches
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Company information
Our company was established in 2004 as a best-in-class supplier providing high-voltage power MOSFETs and MEMS technology processes that deliver high performance for power supplies, advanced technology base wafers, SOI (silicon on insulator), and bonded silicon substrates at a high cost-effectiveness. (Headquartered in the U.S., with manufacturing facilities in the U.K. and R&D in Tokyo) We have developed and realized high-voltage super junction MOSFETs with innovative deep trench etching MEMS structures through a simple and low-cost process. Please feel free to contact us if you have any inquiries.