It has been confirmed that stable crystal growth of bismuth selenide can be achieved.
At Kenix Corporation, we confirmed that stable crystal growth of bismuth selenide, which is expected to be a topological semiconductor, can be achieved using a deposition source that evaporates low-temperature materials stably. We verified the crystal growth of bismuth selenide through RHEED streaks, confirmation of oscillations, and peak verification via Raman spectroscopy measurements. This crystal growth experiment and data were conducted and obtained with the cooperation of a professor from Kyushu Institute of Technology. 【Evaluation Data】 ■ Low-temperature material high-speed molecular beam deposition source ■ Growth rate (Bi2Se3) ■ RHEED streak images (Bi2Se3) ■ RHEED oscillation data (Bi2Se3) ■ Raman spectroscopy measurement data (Bi2Se3) *For more details, please refer to the PDF document or feel free to contact us.
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