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**Abstract** Spectroscopic analysis techniques utilizing near-field light localized at the tips of metal chips are highly anticipated methods for analyzing chemical structures in the nanometer range. Techniques such as tip-enhanced Raman spectroscopy and near-field Raman spectroscopy are representative methods, and various studies have been conducted on their principles and applications. This paper presents examples of their application in material analysis and discusses their practicality for material characterization. **Table of Contents** 1. Introduction 2. Crystal structure analysis of CNTs using TERS 3. Stress analysis at the SiO2/SiC interface using SNOM-Raman 4. Conclusion
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Technical Information Magazine The TRC News "Development of Cutting-Edge Spectroscopic Techniques for Local Structure Analysis at the Nanometer Scale" [Abstract] Spectroscopic analysis techniques utilizing near-field light localized at the tips of metal chips are highly anticipated methods for analyzing chemical structures in the nanometer range. Techniques such as tip-enhanced Raman spectroscopy and near-field Raman spectroscopy are representative methods, and various studies have been conducted on their principles and applications. This paper presents examples of their application to material analysis and discusses their practicality for material characterization. [Table of Contents] 1. Introduction 2. Crystal Structure Analysis of CNTs Using TERS 3. Stress Analysis at the SiO2/SiC Interface Using SNOM-Raman 4. Conclusion [Figures and Tables] Figure 1: Raman Spectroscopy Utilizing Near-Field Light Figure 2: AFM (Atomic Force Microscope) Phase Image, Presence States of Tubes (S: Semiconductor Type, M: Metal Type), RBM Spectra of Each Tube Figure 3: AFM-Raman Spectrum, D/G Ratio Distribution Figure 4: AFM-Raman Spectrum at the Intersection Figure 5: Optical System of Near-Field Raman Figure 6: SiO2/SiC Stacked Film Figure 7: Stress Analysis Near the SiO2/SiC Interface
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