Tohoku University Technology: High-Efficiency MnSi based thermoelectric material : T16-036
Highly efficient MnSi baset material
Conventional manganese-silicide-based thermoelectric material MnSix has excellent thermoelectric property and thermal shock resistance. For example, the output factor S2σ (where S is the Seebeck coefficient and σ is the electrical conductivity), which is one of the thermoelectric property, is maximum 2.22 mW/K2m at 500C. However, MnSi (manganese monosilicide) is deposited in the layers in MnSix c-axis direction with a period of several tens microns, which causes a decrease of the figure of merit Z (output factor S2σ divided by thermal conductivity κ) of the material. This invention limits the MnSi layer deposition and provides a thermoelectric material with an excellent thermoelectric property and its manufacturing method.
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The revenue generated from technology transfer is reinvested as new research funding for universities and researchers, and is utilized to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will vigorously promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by signing basic technology transfer agreements with the following universities (as of June 1, 2025): Tohoku University, Hirosaki University, Iwate University, Akita University, Fukushima University, Yamagata University, Tohoku Gakuin University, Iwate Medical University, Fukushima Medical University, Aizu University, Miyagi University, Hokkaido University, Muroran Institute of Technology, and Showa Medical University.
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