Achieve an unprecedented growth rate!
The deep ultraviolet light emitting device (DUV-LED) is fabricated from AlGaN-based nitride semiconductor. As the substrate material of the AlGaN-based DUV-LED, high lattice consistency with AlGaN, wider band gap than AlGaN, and high thermal conductivity are required, and aluminum nitride (AlN) which satisfies these conditions is noticed. Since AlN shows high dissociation pressure at high temperature, it is difficult to grow AlN crystal by crystal growth technique from melt such as CZ method. Therefore, single crystal growth using sublimation method is mainly carried out. However, the sublimation method requires extremely high temperature to sublimate AlN, which makes it difficult to increase the size of crystal, reduce impurities such as carbon, and reduce the cost. The present invention has made it possible to grow high-quality AlN single crystal at a higher growth rate than the conventional liquid phase growth technique by the liquid phase growth method using Fe-based flux.
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The revenue generated from technology transfer is reinvested as new research funding for universities and researchers, and is utilized to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will vigorously promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by signing basic technology transfer agreements with the following universities (as of June 1, 2025): Tohoku University, Hirosaki University, Iwate University, Akita University, Fukushima University, Yamagata University, Tohoku Gakuin University, Iwate Medical University, Fukushima Medical University, Aizu University, Miyagi University, Hokkaido University, Muroran Institute of Technology, and Showa Medical University.
