Achieving compatibility with a wide range of switching frequencies for electronic devices!
The "CGD65B200S2" is an enhancement mode GaN-on-silicon power transistor. Since there is no external component, it can be directly connected if a sense resistor is needed. It is soldered to a wide copper area for improved flatness, thermal performance, and simplified thermal design. It comes in a DFN 5x6 SMD package that supports high frequencies. 【Features】 ■ Easy design ■ High reliability ■ 650V-8.5A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.
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【Specifications】 ■ 650V-8.5Ae mode GaN power switch ■ ICeGaN gate technology for high gate, with threshold and wide gate voltage window, compatible with gate drivers and controllers, for Si MOSFET ■ Gate drive voltage 9V to 20V ■ Current detection function ■ RDS(on) = 200mΩ ■ Suitable for very high switching frequencies ■ Kelvin contact ■ Small PCB footprint of 5x6mm² ■ Bottom cooling DFN package * You can download the English version of the catalog. * For more details, please feel free to contact us.
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*You can download the English version of the catalog. *For more details, please feel free to contact us.
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Owner Vick Aggarwala, with over 15 years of experience as the Asia Regional Sales Manager for Future/Alcatel/Nu Horizons, has been working to expand the company since becoming independent. With over 4,500 customers and more than 130 agency products, the company provides detailed services in 18 languages.