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The "CGD65B130SH2" is an enhancement mode GaN-on-silicon power transistor that utilizes unique materials. Thanks to the characteristics of GaN, it achieves high current and high voltage resistance, accommodating a wide range of voltages and high switching frequencies. The device can be directly soldered to a large copper area. It enhances the ground plane, improves thermal performance, and simplifies thermal design. 【Features】 ■ Easy design ■ High reliability ■ 650V-12A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.
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【Specifications】 ■ 650V, 12A mode GaN power switch ■ Achieves high gate threshold and wide gate threshold through ICeGaN gate technology, providing a gate voltage window and excellent gate robustness ■ Gate drive voltage: 9V to 20V ■ Innovative NL3 no-load, light-load boost circuit efficiency ■ Current detection function ■ Integrated mirror clamp for 0V turn-off ■ RDS(on) = 130mΩ ■ Suitable for very high switching frequencies ■ Small PCB footprint of 5x6mm² ■ Bottom cooling type DFN package * You can download the English version of the catalog. * For more details, please feel free to contact us.
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*You can download the English version of the catalog. *For more details, please feel free to contact us.
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Owner Vick Aggarwala, with over 15 years of experience as the Asia Regional Sales Manager for Future/Alcatel/Nu Horizons, has been working to expand the company since becoming independent. With over 4,500 customers and more than 130 agency products, the company provides detailed services in 18 languages.