Device loss in a no-load condition approaches zero! Achieving high current and high voltage resistance.
The "CGD65A130SH2" is an enhancement mode GaN-on-silicon power transistor that utilizes unique materials. With ICeGaN gate technology, virtually all gate drivers and controller chips are compatible. It enhances the ground plane, improves thermal performance, and simplifies thermal design. Additionally, the device can be directly soldered to a large copper area. 【Features】 ■ Easy design ■ High reliability ■ 650V-12Ae mode GaN power switch * An English version of the catalog is available for download. * For more details, please feel free to contact us.
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【Specifications】 ■ 650V, 12A mode GaN power switch ■ Achieves high gate threshold and wide gate threshold through ICeGaN gate technology, providing a gate voltage window and excellent gate robustness ■ Gate drive voltage: 9V to 20V ■ Innovative NL3 no-load, light-load boost circuit efficiency ■ Current detection function ■ Integrated mirror clamp for 0V turn-off ■ RDS(on) = 130mΩ ■ Suitable for very high switching frequencies ■ Small PCB footprint of 8x8mm² ■ Bottom cooling DFN package * You can download the English version of the catalog. * For more details, please feel free to contact us.
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*You can download the English version of the catalog. *For more details, please feel free to contact us.
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Owner Vick Aggarwala, with over 15 years of experience as the Asia Regional Sales Manager for Future/Alcatel/Nu Horizons, has been working to expand the company since becoming independent. With over 4,500 customers and more than 130 agency products, the company provides detailed services in 18 languages.