Suitable for analysis of glass, metal, ceramics, silicon, compound semiconductors, shallow implants, and more!
"DYNAMIC SIMS" is a secondary ion mass spectrometry method that can detect trace amounts of all elements (from H to U) in samples with high sensitivity, ranging from ppm to ppb. It allows for qualitative analysis and depth profiling, and additionally enables high-precision quantitative analysis using standard samples (conducted at our partner company's facility). The minimum beam diameter is approximately 30 µm, and it can be further reduced depending on the material. 【Features】 ■ Automatic loading/unloading of samples, high throughput (24 samples/load) ■ Unmatched depth profiling capability and high depth resolution, wide dynamic range ■ Optimized for the analysis of glass, metals, ceramics, silicon, compound semiconductors, shallow implants, etc. ■ Highest detection limit: from ppm to ppb (10^-6 to 10^-9) *For more details, please refer to the PDF document or feel free to contact us.
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![[Example of TOF-SIMS] Analysis of Li](https://image.mono.ipros.com/public/catalog/image/01/df0/612025/IPROS85285479954327417008.jpeg?w=120&h=170)
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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.
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![[Analysis Case] Analysis of the HTM Layer in Perovskite Solar Cells](https://image.mono.ipros.com/public/product/image/8b6/2001510346/IPROS17391914276253465326.jpg?w=280&h=280)
