Successfully identified the crystal growth conditions for high-density quantum dots to realize excellent quantum dot lasers and achieved practical application.
Our quantum dots are produced using the Molecular Beam Epitaxy (MBE) method. The MBE method is a technique that grows crystals on a substrate by evaporating elemental materials from a crucible in a growth chamber maintained at ultra-high vacuum. Through years of accumulated research and development, we have deepened our understanding of crystal growth physics, allowing us to identify the crystal growth conditions for high-density quantum dots that enable the realization of excellent quantum dot lasers from various combinations of growth conditions such as growth rate and substrate temperature, successfully achieving practical application. 【Features】 ■ Stable operation in high-temperature environments and high reliability ■ Excellent return light resistance *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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【Application Examples】 ■ Optical Interconnect ■ LiDAR *For more details, please refer to the PDF document or feel free to contact us.
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QD Laser, Inc.'s Laser Device Division manufactures and sells high-performance semiconductor lasers and epitaxial wafers for communication and industrial use, using GaAs substrates as a platform. With unique semiconductor crystal growth technology and grating formation technology as core technologies, we have commercialized high-performance, high-quality semiconductor lasers with wavelengths ranging from 532nm to 660nm, 1064nm, and 1310nm through wafer, laser element, and module design technologies. We will continue to provide high value-added products tailored to our customers' needs.
