Silicide film can be formed with low cost simply by dipping the free-form base material into the bath.
Mo material is excellent in heat resistance. Since Mo material is easily oxidized at high temperature, it is indispensable to form MoSi2 protective film to prevent it. As a conventional method, the pack cementation method is known. Although this method can stably form MoSi2 films, it requires processing conditions of 1000 ℃ or more and 10 hours or more, leading to high costs. The present invention relates to a method of forming a MoSi2/WSi2 film (e.g., 30 μm) on the surface of a Mo/W material by simply immersing a base material in a bath (e.g., 800 ℃. for 15 min.). According to this method, the largest advantage is that there is no restriction on the shape that can be treated. The base material processed into a product shape can be subjected to silicification treatment. The Mo material having the present invention has been confirmed to exhibit excellent oxidation resistance (see right table), and is useful as a more convenient silicification method.
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The revenue generated from technology transfer is reinvested as new research funding for universities and researchers, and is utilized to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will vigorously promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by signing basic technology transfer agreements with the following universities (as of June 1, 2025): Tohoku University, Hirosaki University, Iwate University, Akita University, Fukushima University, Yamagata University, Tohoku Gakuin University, Iwate Medical University, Fukushima Medical University, Aizu University, Miyagi University, Hokkaido University, Muroran Institute of Technology, and Showa Medical University.
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