Hirosaki Univ. Technology : Method for improving thermoelectric power of thermoelectric semiconductor : K23-013
Improved thermoelectric power of semiconductors with simple processing
The thermoelectric effect has been applied in a wide range of fields such as thermoelectric power generation and thermoelectric cooling. However, high thermoelectric performance is required for industrial use, and research for the development of new thermoelectric materials is actively carried out. The influence of the thermoelectric effect by electromigration (EM) has been studied in semiconductor thin films. It is also known that the stress state after the introduction of EM changes depending on the presence or absence of a protective film in metal wiring. From the above findings, it was found that the thermoelectric performance is improved by introducing EM into metal wiring with a protective film. Metal atoms are moved by the introduction of EM, and by covering the metal wiring with a protective film and introducing EM, the stress distribution is generated inside the wiring, which enables the production of thermoelectric semiconductors with high thermoelectric performance.
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The revenue generated from technology transfer is reinvested as new research funding for universities and researchers, and is utilized to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will vigorously promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by signing basic technology transfer agreements with the following universities (as of June 1, 2025): Tohoku University, Hirosaki University, Iwate University, Akita University, Fukushima University, Yamagata University, Tohoku Gakuin University, Iwate Medical University, Fukushima Medical University, Aizu University, Miyagi University, Hokkaido University, Muroran Institute of Technology, and Showa Medical University.
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