It is possible to determine the diffusion pathways and barriers through simulation.
The electrical, optical, and magnetic properties of semiconductors are strongly influenced by defects and impurities present in the system. Therefore, to achieve the desired material properties, it is necessary to understand and control the behavior of defects and impurities. However, evaluating atomic-level microscopic behavior through experimental methods is challenging, making approaches using computational simulations effective. This document presents a case study using first-principles calculations with the NEB (Nudged Elastic Band) method to evaluate the diffusion pathways and barriers of metal impurities (Fe) in silicon crystals.
Inquire About This Product
basic information
Measurement Method: Computational Science and Data Analysis Product Field: LSI and Memory Analysis Purpose: Structural Evaluation
Price range
Delivery Time
Applications/Examples of results
Analysis of LSI and memory.
catalog（1）
Download All Catalogs![[Analysis Case] Impurity Diffusion Simulation in Silicon Crystals_C0581](https://image.mono.ipros.com/public/catalog/image/01/b89/504107/IPROS06503252728078463392.jpeg?w=120&h=170)
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!