Non-destructive defect evaluation of large-diameter wafers from 4 inches to 6 inches with high resolution is possible!
We would like to introduce our "Defect Evaluation using Synchrotron Topography." In compound semiconductors such as SiC and GaN, there are many crystal defects that significantly affect device characteristics. With this evaluation, it is possible to non-destructively assess defects across the entire surface of large-diameter wafers ranging from 4 inches to 6 inches with high resolution. 【Features】 ■ Visualization of various crystal defects with a resolution of a few micrometers ■ Detection of threading edge dislocations (TED) that cannot be detected by laboratory equipment ■ Evaluation of the types and distribution of defects *For more details, please download the PDF or feel free to contact us.
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.