Calculate the oxide film thickness of the SiO2 surface oxide film on the Si substrate using photoelectron spectroscopy!
In the process of forming an oxide film, controlling the thickness of the oxide film is one of the very important factors. Therefore, we estimated the thickness of the surface oxide film non-destructively using photoelectron spectroscopy. In samples covered with a thin oxide film, many elemental photoelectron peaks show a two-peak structure corresponding to the oxide component and the substrate component. By measuring the spectral intensity of each component, we can estimate the thickness of the oxide film. There are several analytical methods to determine film thickness non-destructively, but compared to other methods, the ability to estimate the thickness at specific locations is a characteristic of this method. *For more detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.*
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.
