You can obtain various physical property information such as point defect formation energy, charge, and optical transitions!
Our organization conducts an analysis of defect levels in wide bandgap semiconductor gallium nitride (GaN) using first-principles calculations. Gallium nitride (GaN), a wide bandgap semiconductor, is primarily used in the field of power devices, and in recent years, there has been an increasing demand for applications such as rapid chargers and 5G communication base stations. Here, we present a case study analyzing the defect levels formed by nitrogen vacancies (VN) in GaN using first-principles calculations. [Measurement and Processing Methods] ■ [PL] Photoluminescence Method ■ Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.
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Download All Catalogs![[Analysis Case] Analysis of Defect Levels in Wide Bandgap Semiconductors - Gallium Nitride Using First-Principles Calculations_C0680](https://image.mono.ipros.com/public/catalog/image/01/6b4/682827/IPROS98413126361411158570.jpeg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
