Effective for understanding surface reactions at the atomic level in the etching process.
With the miniaturization of semiconductor processes, the importance of surface reactions due to etching gases, precursors in ALD film formation, and plasma treatments is increasing. For systems involving complex chemical reactions such as etching, changes in surface bonding states, and defect generation, analysis using molecular dynamics calculations is effective for understanding phenomena at the atomic level. This document evaluates the HF etching reaction of a-SiO2 using molecular dynamics calculations. A similar approach can be applied to various reactions and materials.
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basic information
Measurement Method: Computational Science, AI, Data Analysis Product Fields: LSI, Memory, Manufacturing Equipment, Components Analysis Objectives: Composition Distribution Evaluation, Film Thickness Evaluation, Structural Evaluation, Stress and Strain Evaluation, Others (Chemical Reaction Analysis)
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Applications/Examples of results
Analysis of LSI memory, manufacturing equipment, and components.
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Download All Catalogs![[Analysis Case] HF Etching Simulation of a-SiO2 (Silica) Film by Molecular Dynamics Calculation_C0732](https://image.mono.ipros.com/public/catalog/image/387108/IPROS13342418871315200533.jpeg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!