Hirosaki Univ. Technology：Method for improving strength of wiring：K23-032
Technology for suppressing Electromigration damage and improving reliability
As semiconductor devices are highly integrated, metal wirings used in semiconductor circuits are becoming hotter and denser. Then, electromigration (EM) damage due to metal fatigue becomes a problem. Conventionally, measures to increase EM strength have been taken by devising wiring structures such as lamination and installation of reservoirs. On the other hand, these measures require many processes and are costly. The present invention has developed a method to suppress EM damage only by performing wiring processing which is simpler and less costly than conventional methods. The present invention is a technology to improve reliability against EM damage by reducing current density flowing through wiring. For applications that have not yet been published, information disclosure and other measures will be taken after a contract including a confidentiality clause is concluded. Please feel free to contact us.
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The revenue generated from technology transfer is reinvested as new research funding for universities and researchers, and is utilized to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will vigorously promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by signing basic technology transfer agreements with the following universities (as of June 1, 2025): Tohoku University, Hirosaki University, Iwate University, Akita University, Fukushima University, Yamagata University, Tohoku Gakuin University, Iwate Medical University, Fukushima Medical University, Aizu University, Miyagi University, Hokkaido University, Muroran Institute of Technology, and Showa Medical University.
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