A method to obtain information about the electric field structure inside the sample (junction structure of semiconductors).
By irradiating an electron beam within a SEM device, electron-hole pairs are generated in the sample. Normally, these pairs recombine and disappear, but if they are generated in regions with an internal electric field, such as a depletion layer, the carriers can be drifted by the internal electric field and extracted as a current. This current is referred to as EBIC (Electron Beam Induced Current), and by obtaining it alongside the SEM image, it is possible to visualize the position of the pn junction and the extent of the depletion layer. - Evaluation of pn junctions and crystal defects (dislocations, stacking faults, etc.) is possible. - By overlaying with the SEM image, the positions of the junctions and crystal defects can be identified.
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basic information
■Overview By measuring the EBIC signal, information about the electric field structure inside the sample (the junction structure of semiconductors) can be obtained. It is sensitive to areas where the lifetime of minority carriers in the crystal is short, and it can also identify the locations of dislocations and stacking faults. ■Measurement Principle When an electron beam is irradiated onto the sample, electrons in the valence band are excited, generating electron-hole pairs. Normally, these electron-hole pairs recombine and disappear, but if there is an electric field inside the sample, they are accelerated by the field, resulting in a drift current.
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Applications/Examples of results
- Evaluation of the pn junction position in power semiconductors - Evaluation of the pn junction position in solar cells
Detailed information
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Please consult with us first. ★ We will start with a proposal for the analysis plan ★ We can, of course, meet at your company for discussions. We will carefully explain the analysis results and leave no questions unanswered. Please contact us at 03-3749-2525 or info@mst.or.jp!
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We will hold a visiting seminar. ★We offer free seminars with engineers visiting tailored to our customers' needs★ Depending on your requests, we will introduce analytical techniques and explain analytical data. ◆Examples of seminar content - A broad explanation of MST's analytical methods - A detailed explanation of specific analytical methods from the principles - An explanation of the analytical data requested by the customer Please contact us at 03-3749-2525 or info@mst.or.jp!
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
