We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for IGBT.
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IGBT Product List and Ranking from 10 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

IGBT Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. 旭テック 大阪本社/東京支店/名古屋営業所 Osaka//Electronic Components and Semiconductors
  3. ミカサ商事　MIKASA SHOJI CO., LTD. Osaka//Trading company/Wholesale
  4. 4 null/null
  5. 5 トランシー Tokyo//Electronic Components and Semiconductors
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IGBT Product ranking

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. IGBT
  2. Power semiconductor FET IGBT SiC ミカサ商事　MIKASA SHOJI CO., LTD.
  3. IGBT Module "XHP" 旭テック 大阪本社/東京支店/名古屋営業所
  4. EconoPIM/EconoPACK2/EconoPACK3
  5. 4 APEC manufactured MOSFET・IGBT

IGBT Product List

31～37 item / All 37 items

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MOSFET・IGBT

MOSFET・IGBT

Able to accommodate a wide range of fields! Introduction of a supplier with a consistent production system specialized in MOSFETs and IGBTs.

We handle a wide range of 'MOSFETs' that can be applied in industrial equipment, clean energy fields, automotive devices, and home appliances. We offer a variety of product lineups and achieve stable supply through a consistent production system. Additionally, we can respond to short delivery times with the provision of forecasts. We also have "bipolar transistors," "IGBTs," and "diodes" available. 【Example of Lineup】 ■MOSFET ■Bipolar Transistor ■IGBT ■Diode *For more details, please refer to the PDF document or feel free to contact us.

  • Other semiconductors

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Power semiconductor FET IGBT SiC

Power semiconductor FET IGBT SiC

Many Japanese companies are hiring at a power semiconductor manufacturer that provides technical support tailored to customer needs.

Are you having trouble with the supply of power devices or researching equivalent products? Potens is a specialized manufacturer of power semiconductors, including power MOSFETs. We are a fabless manufacturer based in Taiwan, but we have many Japanese staff members, so we can provide support in Japanese and have a wealth of experience with Japanese companies. If you are considering a replacement from another company, looking for low on-resistance products, or searching for a manufacturer with a rich lineup of packages, please feel free to contact us. 【Features】 - A wide variety of package types and a broad range of voltage ratings from 12V to 1,500V - Supports a wide range of applications, including industrial and automotive - IGBTs available in Half Bridge types - SiC SBDs have started mass production - A system has been established to ensure transparency in production information, allowing customers to place orders with confidence *For more details, please download the catalog or feel free to contact us.

  • Brushless DC Motor
  • Switching Power Supply
  • Circuit board design and manufacturing

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Xiner Semiconductor Technology

Xiner Semiconductor Technology

Xiner was established in 2013.

Xiner was established in 2013 and has received joint investment from well-known institutions such as Shenzhen Zhengyuan Technology, Shenzhen State-owned Assets Supervision and Administration Commission, Shenzhen Talent Innovation Fund, Dachen Venture Capital, Fangguang Capital, and Xiamen Falcon. We focus on the development, application, and sales of IGBT chips, IGBT driver chips, and high-power intelligent power modules. Xiner has an experienced and practical team, with key personnel accumulating over 10 years of industry experience and successfully achieving mass production of IGBT products based on FST technology for the first time in China. Xiner has research and development centers in Shanghai and Shenzhen, and has established sales offices in Shenzhen, Shanghai, Qingdao, Shunde, and Hangzhou to respond quickly to customer needs. Xiner adheres to a business philosophy of application-oriented research and development and open cooperation. We deeply explore customer application requirements, focus on the research and development and design of IGBT-related products, and collaborate with the best partners in the industry to provide customers with the most stable and cost-effective power devices.

  • Transistor

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1200V XPT Gen4 Trench Discrete IGBT

1200V XPT Gen4 Trench Discrete IGBT

Reducing the thermal resistance RthJC can simplify thermal design.

The "1200V XPT Gen4 Trench Discrete IGBT" is a new Gen4 IGBT optimized for low, medium, and high-speed switching applications. These 1200V devices, equipped with XPT thin wafer technology and the fourth-generation trench IGBT process, contribute to reducing gate drive requirements and conduction losses. They also feature low thermal resistance, low losses, and high current density. Furthermore, the positive temperature coefficient of the collector-emitter voltage allows for the parallel use of multiple devices. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of each application. - Reduces gate driver requirements due to decreased gate charge Qg. - Facilitates parallel use due to the positive VCE(SAT) temperature coefficient. - High power density with a maximum collector current capability of 140A at TC = 110°C. - Simplifies thermal design by reducing thermal resistance RthJC. *For more details, please download the PDF or feel free to contact us.

  • Other electronic parts

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650V XPT Gen5 Discrete IGBT

650V XPT Gen5 Discrete IGBT

New Gen5 IGBT optimized for low, medium, and high-speed switching applications.

The "650V XPT Gen5 Discrete IGBT" is a product developed using unique XPT thin wafer technology and a new fifth-generation trench IGBT process. It features low thermal resistance, minimal energy loss, high-speed switching capability, low tail current, and high current density. Additionally, it has low gate charge, which helps reduce gate drive requirements. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of various applications. - Reduction in gate charge Qg decreases gate driver requirements. - Positive VCE(SAT) temperature coefficient facilitates parallel usage. - High power density with a maximum collector current capability of 220A at TC = 110℃. *For more details, please download the PDF or feel free to contact us.

  • Other electronic parts

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