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[Data] Shirutoku Report No. 53 #Avalanche Test (2)

Explaining the transient thermal resistance of devices using diagrams! Calculations will be performed using a MOSFET with appropriate parameters as an example.

★★Shirutoku Report: Useful Information You Should Know★★ This report is a continuation of the avalanche rating test of MOSFETs discussed in Shirutoku Report No. 52. We will explain the relationship between the device's transient thermal resistance and the losses and time during avalanche operation using diagrams and graphs. When selecting a device, comparing devices measured under different conditions is not very meaningful. It is recommended to measure in an environment as close to actual operation as possible, rather than relying solely on data sheet values. 【Contents】 ■ Transient thermal resistance of the device ■ Relationship between losses and time during avalanche operation ■ Graph of Tj and time *For more details, please refer to the PDF document or feel free to contact us.

  • Other measurement, recording and measuring instruments
  • Other contract services
  • Contract Inspection

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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

  • diode

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