We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for MOSFET.
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MOSFET Product List and Ranking from 22 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

MOSFET Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. アイスモス・テクノロジー・ジャパン Tokyo//Electronic Components and Semiconductors
  3. イサハヤ電子 Osaka//Electronic Components and Semiconductors
  4. 4 リバウンドエレクトロニクス 本社 Kanagawa//Electronic Components and Semiconductors
  5. 5 セイワ 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市） Tokyo//Trading company/Wholesale
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MOSFET Product ranking

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. Goford Semiconductor リバウンドエレクトロニクス 本社
  2. Power MOSFET "OptiMOS-TOLT Package"
  3. The ICE8N60T, 8A, 600V TOLL package is now available! アイスモス・テクノロジー・ジャパン
  4. Introduction page of Potens Semiconductor Corp セイワ 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市）
  5. 5 ICE8N60LK, 13A, 600V DFN56 New Arrival!! アイスモス・テクノロジー・ジャパン

MOSFET Product List

1～15 item / All 143 items

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『CSD15380F3』

『CSD15380F3』

20V N-channel FemtoFET MOSFET 'CSD15380F3'

The CSD15380F3 is a 20V, 990mΩ, N-channel FemtoFET MOSFET designed and optimized to minimize footprint for many handheld and mobile applications. Due to its very small capacitance, it can perform switching at high speeds. When used in data line applications, its low capacitance helps minimize noise coupling. Replacing standard small signal MOSFETs with this technology can significantly reduce the footprint. 【Features】 ■ Very low CiSS and COSS ■ Very low Qg and Qgd ■ Ultra-small footprint: 0.73mm x 0.64mm ■ Ultra-thin profile: maximum height 0.35mm ■ Lead and halogen-free ■ RoHS compliant *For more details, please contact us.

  • Transistor

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700V Silicon Carbide MOSFET 'MSC015SMA070'

700V Silicon Carbide MOSFET 'MSC015SMA070'

Low capacitance and low gate charge! High-speed and reliable body diode.

We would like to introduce our 700V Silicon Carbide (SiC) MOSFET, the 'MSC015SMA070'. It features low capacitance and low gate charge, along with a low internal gate resistance (ESR) that enables high-speed switching. It operates stably at a junction temperature TJ(max) = 175℃ and is equipped with a highly reliable body diode and excellent avalanche resistance. Please feel free to contact us if you have any inquiries. 【Features】 ■ Low capacitance and low gate charge ■ High-speed switching due to low internal gate resistance (ESR) ■ Stable operation at high junction temperature, TJ(max) = 175℃ ■ High-speed and reliable body diode ■ Package: D3PAK, TO-247, TO-247-4L, die ■ RoHS compliant *You can download the English version of the catalog. *For more details, please feel free to contact us.

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[Data] WTI Blog October 2020

[Data] WTI Blog October 2020

Key points to consider in power supply design for DC-DC converter design, including avalanche testing of power MOSFETs!

This document summarizes the WTI blog of Wave Technology Co., Ltd., a "development and design promotion business" that addresses the shortage of engineers, from October 2, 2020, to October 30, 2020. It introduces topics such as "Important Ioff Function During Partial Power Down" from October 2, 2020, "Points to Consider in DC-DC Converter Design Power Supply Design" from October 7, 2020, and "What is the Avalanche Test of Power MOSFETs?" from October 30, 2020. Additionally, it includes a wealth of useful information related to products and industries. We encourage you to read it. [Contents (excerpt)] ■ October 2, 2020: Important Ioff Function During Partial Power Down ■ October 6, 2020: Steps in Circuit Board Design and the Joys of a Second-Year Engineer! ■ October 7, 2020: Points to Consider in DC-DC Converter Design Power Supply Design Part 2 ■ October 8, 2020: Features of Switching Power Supply Circuit Methods ■ October 9, 2020: Reasons Why OTA Implementation in IoT Devices is Surprisingly Slow *For more details, please refer to the PDF document or feel free to contact us.

  • Other contract services
  • Embedded system design service
  • Circuit board design and manufacturing

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Introduction page of Potens Semiconductor Corp

Introduction page of Potens Semiconductor Corp

Potent Semiconductor Co., Ltd. is a fabless power semiconductor manufacturer established in Taiwan in September 2012.

■New Product Development ⇒ Launching next-generation semiconductor products ■Quality ⇒ Thorough quality support ■Technical Support ⇒ Providing technology tailored to the needs of each design stage ■Delivery Time ⇒ Please consult with us. Our products are widely adopted for mobile devices, 5G communication equipment, autonomous driving devices, wireless charging equipment, cloud server applications, industrial equipment, and automotive applications. We also have products that can serve as alternatives to those from domestic and international manufacturers, so please feel free to contact us when replacements are needed due to EOL, etc. As a feature of our technical support, our application technology team, composed of members with over 20 years of semiconductor development experience and design expertise accumulated at power supply manufacturers, collaborates to solve technical challenges that may arise during the adoption process (circuit configuration, efficiency, noise, heat generation, etc.) together with our customers. Additionally, we offer a wide range of products from low-voltage to high-voltage (600V - 1500V).

  • Transistor

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Power MOSFET manufactured by POINTNINE.

Power MOSFET manufactured by POINTNINE.

High power, high gain, low noise high power transistor

A high-power transistor characterized by high output, high gain, high efficiency, and low noise. Point9's metal gate MOSFET boasts a gain performance that is 3 to 4 dB higher compared to equivalent products. To maintain high quality standards, Point9 focuses on exclusive sales and in-house production of MOSFETs.

  • Other electronic parts

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SiC wafers (6-inch/8-inch) / SiC MOSFET

SiC wafers (6-inch/8-inch) / SiC MOSFET

We can comprehensively support the SiC chain, not only for SiC wafers but also for raw materials, product design, and SiC power devices.

Qingdao JZLEAP Semiconductor Co., Ltd. is a company established in 2021 in Qingdao, China, by Jiazhan Holding Group from China and LEAP Semiconductor Co. from Taiwan. It is engaged in the research and development, manufacturing, and sales of SiC substrates. The company has continuously invested in research and development to improve issues in the SiC product chain in collaboration with research institutions in Europe and America. The cost of SiC materials accounts for more than 50% of the device cost, which has been a bottleneck restraining the expansion of demand. It is a global company aiming for further commercialization by enhancing the quality and cost competitiveness of SiC products through the establishment of high-quality production lines and yield improvements. The group company LEAPSiC Semiconductor manufactures and sells power device modules such as SiC MOSFETs and diodes. Within the group, comprehensive support can be provided from materials, SiC wafers, product design, to SiC devices.

  • diode
  • Ceramics

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General-purpose N-channel MOSFET "XP23/XP26 Series"

General-purpose N-channel MOSFET "XP23/XP26 Series"

Built-in gate protection diode for electrostatic discharge protection! MOSFET compliant with EU RoHS directive.

The "XP23/XP26 Series" is a general-purpose N-channel MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in various applications such as relay circuits and switching circuits. As an electrostatic countermeasure, it has a built-in gate protection diode. The package adopts a compact SOT-23 (TO-236) (2.9 X 2.4 X h1.15mm), contributing to the miniaturization of equipment. 【Features】 ■ Built-in gate protection diode ■ Low on-resistance ■ High-speed switching *For more details, please refer to the PDF document or feel free to contact us.

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Introduction to Microsemi's Silicon Carbide Product Lineup

Introduction to Microsemi's Silicon Carbide Product Lineup

Robustness that maintains performance even under abnormal operating conditions (temperature, humidity, load)!

Microsemi Corporation develops Silicon Carbide (SiC) chips in-house. The lineup includes MOSFETs (700V, 1200V, 1700V classes) and Schottky Diodes (650V, 1200V, 1700V). They exhibit robustness that maintains performance even under abnormal conditions (temperature, humidity, load) and demonstrate excellent operational performance in high-frequency applications. [Features] - Proposals for custom modules optimized for customer applications, not just standard catalog products. - A variety of options are available for chip, circuit configuration, package type, and heat dissipation materials in custom module development. - Design proposals for the most suitable modules based on customer requirements, leading to mass production supply. For more details, please contact us or download the catalog.

  • Transistor
  • diode

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Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

FMG50AQ170N6

The "SiC MOSFET (TO-247-4L)" manufactured by SanSha Electric Co., Ltd. is an industrial power semiconductor that incorporates a built-in freewheeling diode (FWD) function. It supports high current density. By reducing wiring resistance and achieving a strong bond through a unique terminal structure, it harnesses the performance of SiC chips that reach over four times the current density compared to conventional products. Additionally, it maximizes the effective use of package space, resulting in low RDS(on). 【Features】 ■ Suitable package that achieves an insulated structure and high heat dissipation ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

  • SiC MOSFET 画像2.png
  • Other semiconductors

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UM6K1N | Dual N-channel MOSFET

UM6K1N | Dual N-channel MOSFET

Please consider the dual N-channel MOSFET with two built-in 2SK3018s as an alternative from other manufacturers.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We have many alternatives for discrete items such as transistors and MOSFETs. Please feel free to contact us. Model number: UM6K1N (SOT-363 package) 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end process (packaging and testing), spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *We can request the latest datasheet from the manufacturer, so please feel free to make a request.

  • JSCJ.jpg
  • Transistor

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MOSFET　SupIR SMD-2

MOSFET　SupIR SMD-2

Reduce the risk of package cracking due to thermal expansion and contraction caused by temperature application after substrate mounting.

We offer a diverse range of discrete products in various package types for defense, aerospace, and space applications. Features of SupIR SMD-2 ■ Compact and lightweight ■ Temperature resistance reduced by 0.25℃ / W (compared to carrier SMD-2) *Please refer to the image ■ Reduced package resistance ■ Reduced parasitic inductance ■ Higher current rating for ID *For more details, please refer to the catalog or feel free to contact us.

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CMUDM7004　MOSFET

CMUDM7004　MOSFET

Central Semiconductor MOSFET CMUDM7004

The following four products from Centra Semiconductor are optimal devices for the "LiDAR" in autonomous driving systems and have been adopted by overseas LiDAR manufacturers.

  • Transistor

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