We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for MOSFET.
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MOSFET Product List and Ranking from 22 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
This ranking is based on the number of page views on our site.

MOSFET Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. リバウンドエレクトロニクス Kanagawa//Electronic Components and Semiconductors 本社
  3. イサハヤ電子 Osaka//Electronic Components and Semiconductors
  4. 4 セイワ Tokyo//Trading company/Wholesale 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市）
  5. 5 null/null
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MOSFET Product ranking

Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
This ranking is based on the number of page views on our site.

  1. Analog Power Inc リバウンドエレクトロニクス 本社
  2. D2PAK-7 package equipped SiC MOSFET 1200V
  3. Power MOSFET "OptiMOS-TOLT Package"
  4. 4 Introduction page of Potens Semiconductor Corp セイワ 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市）
  5. 5 Goford Semiconductor リバウンドエレクトロニクス 本社

MOSFET Product List

31～45 item / All 139 items

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ICE22N60B 22A,600V POWER MOSFET

ICE22N60B 22A,600V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE22N60B from Ice Moss Technology is a 22A, 600V TO-263 (D2PAK) package. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced mutual conductance performance

  • Transistor

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ICE20N60　20A, 600V POWER MOSFET

ICE20N60　20A, 600V POWER MOSFET

★In stock! Same-day shipping available! This power MOSFET contributes to power management energy saving and has a proven track record with power supply manufacturers.

The ICE20N60 from IceMOS Technology is a TO220 package rated for 20A and 600V. 【Features】 ■ TO220 package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor

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ICE10N60FP 10A,600V POWER MOSFET

ICE10N60FP 10A,600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE10N60FP from IceMOS Technology is a TO220 Full Pak package rated for 10A and 600V. 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

  • Transistor

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ICE8S65FP 8A,650V POWER MOSFET

ICE8S65FP 8A,650V POWER MOSFET

Mass production release starting January 2023! GEN2 Super Junction MOSFET

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

  • Transistor

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ICE15N73FP 15A,730V POWER MOSFET

ICE15N73FP 15A,730V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE15N73FP from IceMOS Technology is a TO220 FullPak package rated at 15A, 730V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor

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General-purpose MOSFET

General-purpose MOSFET

Introduction of general-purpose MOSFET lineup (VDSS = ~60V, ID = ~0.7A)!

Introducing our general-purpose MOSFET. This product can be used for various applications due to its general-purpose nature. Target applications include LED driving, motor driving, lithium-ion charging control, DC-DC converters, and load switches, among others. The product specifications include a maximum VDSS of 60V, a maximum ID of 0.7A, and a threshold voltage ranging from 0.5 to 2.0V, making it a versatile general-purpose MOSFET with various characteristics. Additionally, we offer ultra-compact packages such as SC-75A, SC-70, and SC-59, making it suitable for new adoptions as well as alternatives for EOL products from other companies. Some products are also compatible with automotive applications, so please refer to the brochure for details or contact our sales team for inquiries.

  • Transistor

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MOS FET Single N-Channel (ELM43400CB)

MOS FET Single N-Channel (ELM43400CB)

[Recommended] This is a high-current MOSFET with characteristics of low input capacity, low voltage operation, and low ON resistance.

The single power MOSFET series is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance. The single N-channel ELM43400CB is a high-current MOSFET with the same characteristics of low input capacitance, low voltage drive, and low ON resistance. Some products are ESD resistant due to protective circuits. Please check our website for more information. *For more details on the 43400CB, please refer to the catalog or feel free to contact us.

  • Transistor

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『CSD18541F5』

『CSD18541F5』

60-V N Channel FemtoFET MOSFET 'CSD18541F5'

The 54mΩ, 60V N-channel FemtoFET MOSFET technology 'CSD18541F5' is designed and optimized for many industrial load switch applications with space constraints, minimizing the footprint. By replacing standard small signal MOSFETs with this technology, the footprint size can be significantly reduced. 【Features】 ■ Low on-resistance ■ Extremely low Qg and Qgd ■ Ultra-small footprint: 1.53mm × 0.77mm ■ Low profile: height 0.35mm ■ RoHS compliant *For more details, please contact us.

  • Transistor

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『CSD22206W』

『CSD22206W』

8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'

This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.

  • Other semiconductors
  • Other power sources
  • Transistor

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[Data] Shirutoku Report No. 52 #Avalanche Test (1)

[Data] Shirutoku Report No. 52 #Avalanche Test (1)

Avalanche surrender, UIS test circuits and waveforms, etc.! An explanation of the avalanche tolerance testing of power MOSFETs.

★★Shirutoku Report: Useful Information You Should Know★★ The avalanche rating measured in avalanche testing refers to the amount of energy that a power device can withstand before it begins to conduct current rapidly and ultimately fails when a voltage exceeding its breakdown voltage is applied. This report explains avalanche breakdown, UIS test circuits, and waveforms using diagrams. To verify whether there are any issues in the event that the device enters avalanche mode, it is necessary to investigate the avalanche rating of power MOSFETs when designing power electronics circuits. [Contents] ■ Image of avalanche breakdown ■ Test circuit and waveform for measuring avalanche rating *For more details, please refer to the PDF document or feel free to contact us.

  • Other measurement, recording and measuring instruments
  • Other contract services
  • Contract Inspection

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[Data] Shirutoku Report No. 53 #Avalanche Test (2)

[Data] Shirutoku Report No. 53 #Avalanche Test (2)

Explaining the transient thermal resistance of devices using diagrams! Calculations will be performed using a MOSFET with appropriate parameters as an example.

★★Shirutoku Report: Useful Information You Should Know★★ This report is a continuation of the avalanche rating test of MOSFETs discussed in Shirutoku Report No. 52. We will explain the relationship between the device's transient thermal resistance and the losses and time during avalanche operation using diagrams and graphs. When selecting a device, comparing devices measured under different conditions is not very meaningful. It is recommended to measure in an environment as close to actual operation as possible, rather than relying solely on data sheet values. 【Contents】 ■ Transient thermal resistance of the device ■ Relationship between losses and time during avalanche operation ■ Graph of Tj and time *For more details, please refer to the PDF document or feel free to contact us.

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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

  • diode

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[Information] Shirutoku Report No. 106 # Introduction to Principle Verification

[Information] Shirutoku Report No. 106 # Introduction to Principle Verification

Check if only a specific function performs as intended! Here is a simple example.

★★Shirutoku Report: Useful Information You Can Benefit From★★ At WTI, we conduct design and development tailored to our customers' needs, and this time we will discuss principle verification. Here, principle verification refers to the confirmation of basic operations and characteristics before starting the full-scale product design. When there is a request for new development and it is believed that there may be technical challenges, we may suggest starting with principle verification. [Contents] ■ About Principle Verification ■ Confirmation of whether the MOSFET for inrush current prevention functions as intended *For more details, please refer to the PDF document or feel free to contact us.

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

  • Other semiconductors
  • Other electronic parts

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