We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for SICMOSFET.
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SICMOSFET Product List and Ranking from 5 Manufacturers, Suppliers and Companies

Last Updated: Aggregation Period:Aug 20, 2025~Sep 16, 2025
This ranking is based on the number of page views on our site.

SICMOSFET Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Aug 20, 2025~Sep 16, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. 武蔵野物産 Tokyo//Electronic Components and Semiconductors
  3. モリ電子工業 Osaka//Electronic Components and Semiconductors
  4. 4 Wave Technology Hyogo//Service Industry
  5. 5 旭テック Osaka//Electronic Components and Semiconductors 大阪本社/東京支店/名古屋営業所

SICMOSFET Product ranking

Last Updated: Aggregation Period:Aug 20, 2025~Sep 16, 2025
This ranking is based on the number of page views on our site.

  1. D2PAK-7 package equipped SiC MOSFET 1200V
  2. SiC wafers (6-inch/8-inch) / SiC MOSFET 武蔵野物産
  3. SiC MOSFET 2000 V
  4. SiC MOSFET『FMG50AQ120N6』 モリ電子工業
  5. 4 SiC MOSFET discrete 650 V/107 mΩ

SICMOSFET Product List

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SiC wafers (6-inch/8-inch) / SiC MOSFET

We can comprehensively support the SiC chain, not only for SiC wafers but also for raw materials, product design, and SiC power devices.

Qingdao JZLEAP Semiconductor Co., Ltd. is a company established in 2021 in Qingdao, China, by Jiazhan Holding Group from China and LEAP Semiconductor Co. from Taiwan. It is engaged in the research and development, manufacturing, and sales of SiC substrates. The company has continuously invested in research and development to improve issues in the SiC product chain in collaboration with research institutions in Europe and America. The cost of SiC materials accounts for more than 50% of the device cost, which has been a bottleneck restraining the expansion of demand. It is a global company aiming for further commercialization by enhancing the quality and cost competitiveness of SiC products through the establishment of high-quality production lines and yield improvements. The group company LEAPSiC Semiconductor manufactures and sells power device modules such as SiC MOSFETs and diodes. Within the group, comprehensive support can be provided from materials, SiC wafers, product design, to SiC devices.

  • diode
  • Ceramics

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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

  • diode

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SiC MOSFET FMG50AQ120N6

1200V rated SiC MOSFET discrete products that achieve high reliability and low loss.

- Insulation-type package with heat dissipation capability (Rth(j-c)=0.22℃・w Typ) - Adopts a 4-pin structure to reduce the influence of source terminal inductance, achieving faster switching and lower loss - Industry-leading low on-resistance (15mΩ Typ Tj=150℃)

  • Other electronic parts

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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

  • Other electronic parts

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SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

  • Other semiconductors

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