We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for MOSFET.
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MOSFET Product List and Ranking from 22 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 08, 2025～Nov 04, 2025
This ranking is based on the number of page views on our site.

MOSFET Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 08, 2025～Nov 04, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. アイスモス・テクノロジー・ジャパン Tokyo//Electronic Components and Semiconductors
  3. イサハヤ電子 Osaka//Electronic Components and Semiconductors
  4. 4 セイワ 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市） Tokyo//Trading company/Wholesale
  5. 5 リバウンドエレクトロニクス 本社 Kanagawa//Electronic Components and Semiconductors
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MOSFET Product ranking

Last Updated： Aggregation Period:Oct 08, 2025～Nov 04, 2025
This ranking is based on the number of page views on our site.

  1. Goford Semiconductor リバウンドエレクトロニクス 本社
  2. Introduction page of Potens Semiconductor Corp セイワ 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市）
  3. The ICE8N60T, 8A, 600V TOLL package is now available! アイスモス・テクノロジー・ジャパン
  4. Power MOSFET "OptiMOS-TOLT Package"
  5. 5 Infineon's latest generation SiC power semiconductors

MOSFET Product List

46～60 item / All 143 items

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ICE10N60FP 10A,600V POWER MOSFET

ICE10N60FP 10A,600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE10N60FP from IceMOS Technology is a TO220 Full Pak package rated for 10A and 600V. 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

  • Transistor

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ICE8S65FP 8A,650V POWER MOSFET

ICE8S65FP 8A,650V POWER MOSFET

Mass production release starting January 2023! GEN2 Super Junction MOSFET

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

  • Transistor

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ICE15N73FP 15A,730V POWER MOSFET

ICE15N73FP 15A,730V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE15N73FP from IceMOS Technology is a TO220 FullPak package rated at 15A, 730V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor

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ICE8N60LK, 13A, 600V DFN56 New Arrival!!

ICE8N60LK, 13A, 600V DFN56 New Arrival!!

The arrival of the small and thin package DFN56.

A MOSFET that is strong against avalanche with a rating of 8A, 600V. It is ideal for compact power supplies.

  • Electron tube
  • power supply
  • Transistor

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The ICE8N60T, 8A, 600V TOLL package is now available!

The ICE8N60T, 8A, 600V TOLL package is now available!

It is a product that is strong against avalanches.

GEN1 Series Other package types are also available.

  • Electron tube
  • power supply
  • Transistor

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General-purpose MOSFET

General-purpose MOSFET

Introduction of general-purpose MOSFET lineup (VDSS = ~60V, ID = ~0.7A)!

Introducing our general-purpose MOSFET. This product can be used for various applications due to its general-purpose nature. Target applications include LED driving, motor driving, lithium-ion charging control, DC-DC converters, and load switches, among others. The product specifications include a maximum VDSS of 60V, a maximum ID of 0.7A, and a threshold voltage ranging from 0.5 to 2.0V, making it a versatile general-purpose MOSFET with various characteristics. Additionally, we offer ultra-compact packages such as SC-75A, SC-70, and SC-59, making it suitable for new adoptions as well as alternatives for EOL products from other companies. Some products are also compatible with automotive applications, so please refer to the brochure for details or contact our sales team for inquiries.

  • Transistor

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Low voltage driven MOSFET

Low voltage driven MOSFET

Expanding the lineup of low-voltage drive MOSFETs!

In mobile devices such as mobile phones, it is necessary to reduce circuit losses in order to decrease power consumption and extend operating time, which has led to a demand for low-voltage driven MOSFETs. As our first initiative, we are expanding our offerings for 1.8V and 1.5V driven products through optimization of the wafer process, and we plan to develop 1.2V in the second phase and 0.9V in the third phase.

  • Transistor

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『CSD18541F5』

『CSD18541F5』

60-V N Channel FemtoFET MOSFET 'CSD18541F5'

The 54mΩ, 60V N-channel FemtoFET MOSFET technology 'CSD18541F5' is designed and optimized for many industrial load switch applications with space constraints, minimizing the footprint. By replacing standard small signal MOSFETs with this technology, the footprint size can be significantly reduced. 【Features】 ■ Low on-resistance ■ Extremely low Qg and Qgd ■ Ultra-small footprint: 1.53mm × 0.77mm ■ Low profile: height 0.35mm ■ RoHS compliant *For more details, please contact us.

  • Transistor

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『CSD22206W』

『CSD22206W』

8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'

This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.

  • Other semiconductors
  • Other power sources
  • Transistor

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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

  • diode

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[Information] Shirutoku Report No. 106 # Introduction to Principle Verification

[Information] Shirutoku Report No. 106 # Introduction to Principle Verification

Check if only a specific function performs as intended! Here is a simple example.

★★Shirutoku Report: Useful Information You Can Benefit From★★ At WTI, we conduct design and development tailored to our customers' needs, and this time we will discuss principle verification. Here, principle verification refers to the confirmation of basic operations and characteristics before starting the full-scale product design. When there is a request for new development and it is believed that there may be technical challenges, we may suggest starting with principle verification. [Contents] ■ About Principle Verification ■ Confirmation of whether the MOSFET for inrush current prevention functions as intended *For more details, please refer to the PDF document or feel free to contact us.

  • Other contract services

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NIKO SEMICONDUCTOR MOSFET Product List

NIKO SEMICONDUCTOR MOSFET Product List

Introducing products from Niko Semiconductor, which have a strong track record of being used in Taiwanese-made motherboards!

We would like to introduce the products of Niko Semiconductor, which we handle. Niko Semiconductor is a Taiwanese MOSFET manufacturer established in 1998, known for its extensive experience in motherboards made in Taiwan. The product lineup includes low voltage (12V–40V), medium voltage (60V–400V), and high voltage (400V–900V) options, with a wide range of packages available from PDFN and SOT23 to TO252 and TO220. The PDF document below contains the product list. There are also products not listed, so please feel free to contact Seiwa if you have any inquiries. 【Major Products of Niko Semiconductor】 ■MOSFET ■PFC Controllers ■Power ICs *For more details, please refer to the PDF document or feel free to contact us.

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  • Other electronic parts

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

  • Other semiconductors
  • Other electronic parts

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SiC MOSFET『FMG50AQ120N6』

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

  • Other semiconductors

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