We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for Measuring Instrument.
ipros is IPROS GMS IPROS One of the largest technical database sites in Japan that collects information on.

Measuring Instrument×一般財団法人材料科学技術振興財団 MST - List of Manufacturers, Suppliers, Companies and Products

Measuring Instrument Product List

16~20 item / All 20 items

Displayed results

[Analysis Case] Indoor Air Quality Measurement Case

It is possible to analyze aldehydes and VOCs (volatile organic compounds) in indoor air.

Formaldehyde and volatile organic compounds (VOCs: Volatile Organic Compounds, such as toluene, xylene, and para-dichlorobenzene) emitted from building materials, adhesives, and preservatives are considered to be causes of sick house syndrome and sick school syndrome. This report introduces a case study analyzing the concentrations of formaldehyde and toluene in indoor air sampled using passive methods.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

Precautions for Low-Temperature Photoluminescence Measurement

Photoluminescence method

- Photoluminescence measurement (PL measurement) can be conducted not only at room temperature but also by placing the sample in a cryostat for low-temperature measurements. Low-temperature measurements tend to show an increase in peak intensity and a decrease in peak full width at half maximum compared to room temperature measurements, which may provide insights into various energy levels. - Below, we will explain the precautions for low-temperature measurements and the differences in spectral shapes between room temperature and low-temperature measurements.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.

In the fabrication of Si-based semiconductor devices, various processes such as ion implantation and annealing are performed. It is considered important to confirm the degree of irradiation defects and the extent of crystallinity recovery before and after these processes in order to control the manufacturing process. Photoluminescence (PL) measurements at low temperatures are one effective means of investigating these aspects. An example of PL measurements of samples that underwent ion implantation on a Si substrate followed by annealing treatment is presented.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

Identification of resistance anomalies due to absorption current

You can identify high resistance and open areas in the wiring from the absorption current image.

- Possible to identify high resistance abnormal areas - The current flowing through the wiring is weak (pA) - Measurement is possible even with a surface protective film present - Measurement is possible even with multilayered wiring - Measurement is possible under conditions almost identical to SEM observation

  • Contract Analysis
  • Contract measurement

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

Observation of structural changes in metallic materials through tensile testing using in situ X-ray CT.

Capable of evaluating three-dimensional structural changes according to tensile stress.

In situ X-ray CT measurements allow for internal structure analysis under conditions where a load (tension or compression) is applied to the sample. In this document, in situ X-ray CT measurements were conducted using an aluminum plate as the sample, both in its normal state and in an extended state. We calculated the tensile stress applied to the sample and monitored the internal structural changes under each stress condition. By combining in situ X-ray CT measurements with image analysis technology, it is possible to evaluate under actual usage conditions, which was previously difficult, and assess the impact of stress on the product.

  • img_c0649_2.jpg
  • Contract measurement
  • Contract Inspection

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration