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Polishing×日本エクシード - List of Manufacturers, Suppliers, Companies and Products

Polishing Product List

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Si (silicon) wafer polishing process

Polishing processes are available in various sizes and thicknesses.

Regarding SOI wafers, the transition to larger diameters (12"φ) is steadily progressing, and currently, the latest technologies that cannot be achieved with smaller diameters are being developed with these materials. However, the subsequent processes (device processes) are limited to smaller diameters (8"φ or less), which means that the latest technologies available in large-diameter materials cannot be utilized. Japan Exceed is constantly striving to improve technology to meet these needs and has established a production system based on mass production. Additionally, size reduction of SOI wafers is also possible. 【Processing Details】 ■ Material Names: Various diameter Si wafers, SOI wafers, single crystal and polycrystalline silicon component materials (electrodes for dry etching equipment, focus rings, etc.) ■ Compatible Sizes - Φ12.5mm to Φ200mm - 3mm×3mm to 156mm×156mm - Rectangular shapes are also supported - Finished Thickness: 25μm and above - Flatness: TTV 1μm or less - Particles: 20 or fewer at 0.2μm - Surface Roughness: 0.3nm or less - Film Thickness Control: Possible *For more details, please download the materials or contact us.

  • Wafer
  • diode
  • Contract manufacturing

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Metal materials grinding processing

Polishing processes are available in various sizes and thicknesses.

Processed material achievements: - SUS - Au - Ag - Cu - W - Ti - Al

  • Circuit board design and manufacturing
  • others

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Various material grinding processing

We can perform polishing processes according to various sizes and thicknesses. We can also accommodate block-shaped materials and those with thicknesses of several centimeters.

Processing Material Achievements - Ge - C - MnZn - Ferrite - TeO2 - SrTiO3 - LaGaO4 - LaSrGaO4 - NGO - Y2Fe5O12 - Y3Al5O12 - BGO - Resin Materials

  • Circuit board design and manufacturing
  • others

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【Grinding Process Material】Composite Material Grinding Process

Our company is capable of polishing compound semiconductor crystals. We can accommodate a wide range of processing, from small quantities to mass production, not limited to standard products.

In the case of compounds, unlike silicon oxides, they are very soft materials, and it is said to be difficult to thin them out. However, at Japan Exceed, we have made it possible to finish thinned compound wafers that have already been patterned, and we can accommodate delivery methods for our customers. We obtained a patent in 1996 for the "development of mirror polishing using abrasives that do not contain bromine." We cater to a wide range of needs, from small quantities to mass production, not limited to standard products. We perform ultra-smooth polishing of SiC single crystals used in power devices, as well as GaN single crystals used in laser diodes and high electron mobility transistors (HEMT) to achieve high recording density. We also process the backside of patterned wafers to thin them out. 【Processing Details】 ■ Processing Materials - SiC - GaN - GaP - GaAs - GaSb - ZnS - ZnSe - ZnTe - Backside processing of patterned wafers, etc. ■ Finished Thickness: 20μm and above ■ Surface Roughness Performance Value: GaP Surface Roughness: 0.1nm *For more details, please download the materials or contact us.

  • Wafer
  • diode
  • Contract manufacturing

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Abrasive processing material: oxide materials for abrasive processing

It is possible to polish various oxide semiconductor crystals.

Our company possesses the capability to handle processing technology for mass production. Additionally, we also perform polishing processes for substrates used in blue light-emitting diodes and laser diodes. We carry out lapping and polishing processes on a mass production basis to meet the processing specifications required for various applications. 【Processing Details】 ■ Material Names: LiTaO3 (LT), LiNbO3 (LN), ZnO, Quartz, Sapphire, Sapphire Reclaimed, etc. ■ Processing Materials: LiNbO3 (LN), LiTaO3 (LT), ZnO, Quartz, Al2O3 (Sapphire) Backside processing of patterned wafers, reclamation processing, etc. ■ Supported Sizes ・Φ63mm to Φ150mm ・3mm×3mm to 100mm×100mm ■ Finished Thickness: 20μm and above ■ Flatness: TTV: 5μm or less *For more details, please download the materials or contact us.

  • Wafer
  • diode
  • Processing Contract

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