Last Updated： Aggregation Period:May 06, 2026～Jun 02, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:May 06, 2026～Jun 02, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:May 06, 2026～Jun 02, 2026
This ranking is based on the number of page views on our site.
61～90 item / All 437 items
3D modeling tool for high-brightness light-emitting diodes (SLED)
Explanation of a theoretical model based on Green's function theory. Analysis using test devices. (Profile of lateral mode, gain, band diagram, carrier distribution under different injections, spatial hole burning, I-V characteristics, L-I curve, 3D effects on amplifier spontaneous emission.)
Analysis tool for slab-coupled waveguide lasers.
The temperature dependence of the mechanism of refractive index change using the Kramers-Kronig equations and the free electron/plasma model yields reasonable results. LASTIP provides an accurate estimate of the transverse mode behavior in SCOWL-type high-power lasers. For more in-depth analyses, such as those involving long resonators, it is recommended to use PICS3D, as it is necessary to consider longitudinal spatial hole burning and facet optical damage effects.
Quantum Cascade Laser Analysis Tool
Subband structure calculation enables the fundamental design of quantum cascade lasers (QCL), such as emission wavelength and miniband alignment. A microscopic rate equation model easily generates optical gain, such as local current and photon density. In macroscopic QCL simulations, electrons are injected from the electrodes into the multiple quantum wells (MQW) and collected from the MQW back to the electrodes. A non-local current injection model is proposed with a mean-free-path of 100-1000 Å.
Analysis tool for semi-polar InGaN semiconductor lasers
Introducing a modeling approach that considers crystal coordinate systems, strain, and stress. Using 2D calculations in LASTIP as an example, comparing optical gain without internal electric fields between semi-polar, non-polar, and c-plane. A model based on k.p. theory for wurtzite-type MQW devices considering crystal growth direction is implemented in APSYS, LASTIP, and PICS3D.
Three-dimensional analysis tool for multimode optical interference waveguide semiconductor lasers.
Simulation of the emission characteristics, electrical characteristics, and thermal analysis of multimode interference (MMI) semiconductor lasers. Introduction of the physical model. Explanation of the simulation procedure from mask creation to three-dimensional simulation. Discussion of considerations to be taken into account in the design of MMI devices.
CMOS image sensor 3D analysis tool
Introducing the features of Crosslight's TCAD and 3D simulation. Additionally, explaining the characteristics of MaskEditor and SemiCrafter, which are tools for constructing 3D structures. To conduct actual simulations, an overview of the CMOS image sensor process is provided, along with explanations of the tasks for each step.
Analysis tool based on a self-consistent model of quantum well infrared sensors.
Crosslight's APSYS can provide a comprehensive physical model for the analysis of QWIP (Quantum Well Infrared Photodetectors) devices. The validity of the model is sufficiently reasonable when compared to experimental results. Non-local quantum corrections to the drift-diffusion theory are necessary to explain the photo-carrier extraction in the properties of QWIPs.
Analysis tool using nonequilibrium Green's function calculations for nanowire MOSFETs.
Introducing the features of a physical model for analyzing nano-wire MOSFETs. A cylindrical coordinate system is used to maximize simulation efficiency. A hybrid approach utilizing NEGF (Non-Equilibrium Green's Function) in the channel region and standard drift-diffusion (DD) in other regions. Flexible selection of subbands including quantum confinement and quantum ballistic electron transport in NEGF. A self-consistent solution of the NEGF equations combined with all other drift-diffusion equations.
3D analysis tool for SOI FinFET
An overview of the simulation flow for SOI FinFETs and the tools used therein is provided. An example of 3D process simulation using the process simulator CSupre is introduced. Based on the structural data created from the process simulation, the features of FinFET modeling in the device simulator APSYS, including quantum confinement, oxide layer dissolution, and quantum ballistic current transport models, along with analysis examples, are presented.
Analysis tool for 3D simulation effects in MOSFETs.
In STI (shallow trench isolation) confined MOS, the SiO2/Si interface separation causes dopant diffusion in the width direction. For HV (high voltage) MOSFETs, 3D diffusion and narrow gate side fields shift the threshold voltage Vth downward as if reducing the width. In the typical process flow of nanoMOSFETs, reducing the width to W>0.1 um increases Vth. In square-trenched UMOS, the effects of geometry and 3D diffusion shift Vth downward as if reducing the square size.
MOSFET substrate current analysis tool
This introduces a modeling example of NMOS (N-channel MOSFET) using the process simulator CSuprem. It also illustrates characteristic analysis using the CSuprem device simulator APSYS. Additionally, it obtains the substrate current characteristics of bell-shaped curves from simulations and compares them with experimental results.
Analysis tool for quantum wells of strained MOSFETs.
The semi-classical quantum subband valley-averaged mobility model takes into account valley splitting and anisotropy. It allows for a self-consistent solution of the drift-diffusion equations with quantum corrections using the averaged subband density of states and mobility. The characteristics of silicon MOSFETs with various stresses and strains in crystal directions can be predicted.
Simulation of mixed circuits and devices
Introducing the mixed mode of Crosslight that allows for simulation with a combination of circuits (SPICE) and devices. A brief explanation of the mechanism of circuit and device mixed simulations. An example of executing mixed mode and analyzing results using IGBT devices as a subject.
Analysis tool for electric field absorption modulators
Simulated a waveguide modulator using the Franz-Keldysh effect with APSYS. Enhanced by dipole matrix elements obtained from many-body calculations, showing excellent agreement with experimental results. Free-carrier theory alone is insufficient to reproduce the experimental results. The simulation results for electric field, absorption, and transmission align well with the experimental results.
A tool for analyzing the effect of crystal orientation on the optical properties of GaN substrate devices.
An explanation of crystal orientation and polarization. Introduction of physical models to explore the effects of crystal orientation, such as the k.p. method for analyzing quantum wells (QW) at arbitrary crystal orientations. Examples of results using InGaN/GaN QW, including a comparison of optical gain at different crystal orientations, the effects of crystal orientation on c-plane and m-plane, and a comparison of semiconductor laser diode (LD) performance through finite-element simulation.
Analysis tool for the tunneling effect in heterojunctions.
The quantum tunneling model cannot ignore the impact on carrier transport at high doping levels. The change in aluminum composition grading allows for a pseudo quantum tunneling effect by flattening the potential barrier. However, the distance selection of the aluminum composition grading is crucial. By adding sufficiently many internal extra mesh points, effects similar to those of composition grading can be achieved. The quantum tunneling model is the most reliable method for enhancing carrier transport through quantum mechanics.
FDTD calculation by APSYS of Crosslight
Developed a unique 2D/3D FDTD simulator by Crosslight. It can be directly connected to Crosslight's device simulator. Script creation and processing using Python are possible. All operations can be controlled from the GUI. Material dispersion is provided by various dispersion models. Equipped with PBC and UPML/CPML absorbing boundary conditions. Acceleration of processing through parallel computation is available using MPI parallel processing or GPU data parallelism.
Physical Model in CSuprem
Based on physical models for ion implantation, deposition, etching, diffusion, and oxidation, it is possible to perform one-dimensional, two-dimensional, and three-dimensional process simulations of various semiconductor structures. It is an indispensable and reliable accurate simulation tool for controlling research and development costs in IC manufacturing processes. It can output doping profiles for device simulators.
Process analysis tool for p-doping of GaN and III-nitride materials.
Addressing the issue of p-type conductivity using the process simulator PROCOM for Metal-Organic Chemical Vapor Deposition (MOCVD). It is important to control the incorporation of Mg during film growth. The simulation assists in optimizing the complex doping processes and the MOCVD process. Different types of acceptors can also be simulated using this software.
Description of the options for the general-purpose 2D/3D semiconductor device simulator APSYS.
Introduction to various options and physical models of the semiconductor device simulator APSYS.
![[Video] Semiconductor Process & Device Simulator "NovaTCAD"](https://image.mono.ipros.com/public/product/image/109/2000358506/IPROS654598304808202301.JPG?w=280&h=280)
Crosslight's TCAD integrates 2D/3D process simulators and device simulators. Free trial available!
■ A video demonstrating the automatic processing of simulations using NovaTCAD is currently available on the YouTube link below! ■ If you would like a trial version, please use the "Trial Version Application Form." (For details about the product, please refer to the product introduction materials.)
Achieving front-loading of mechanism verification in the lightweight 3D format XVL.
The "XVL Kinematics Suite" is a mechanical simulator that enables 3D verification of the mechanical operation and dynamic interference of large-scale equipment/devices. This product addresses issues related to the shape of mechanisms considering their operation, which are often trouble factors during the startup of equipment/devices, as well as problems arising from insufficient communication between mechanical and control design, thereby achieving front-loading in equipment/device design. Additionally, it allows for easy configuration of simple mechanical elements and operation verification through mechanism previews (including multi-axis angle adjustments). 【Features】 ■ 3D verification of mechanical operation and dynamic interference for large-scale equipment/devices ■ Early resolution of trouble factors during equipment/device startup ■ Ability to verify operation through easy configuration of simple mechanical elements and mechanism previews ■ Complex link mechanisms can operate with simple axis definitions ■ Capability to output position and posture when interference occurs *For more details, please refer to the PDF materials or feel free to contact us.
A completely new painting education system using VR technology that has never existed before.
Our "VR Spray Painting Simulator" allows for painting training in a VR (Virtual Reality) environment that closely resembles real-life situations by wearing a head-mounted display and holding the included spray gun. This significantly reduces costs such as labor, paint, booth usage, and panel materials. Additionally, after VR painting training, more efficient painting education can be conducted through detailed performance analysis, including objective feedback from trajectory analysis tools and scoring of painting techniques. It is an ideal system for helping young painters overcome their weaknesses and for building a technical foundation for newcomers.
Let's start physical computation simulations easily and enjoyably!
Go Simulation! is a robot simulator that uses three-dimensional physics calculations. It not only allows for the creation of 3D model data and motion but also includes game features such as creating original robots for battle competitions, making it enjoyable for both professionals and amateurs. The sample data is also abundant, so even beginners can start simulating robots immediately after installation.
Technical Document: "Vehicle Motion Model and Driving Simulator Connecting Experiments and Analysis"
Introduction to the vehicle motion model and the pinnacle of real-time simulation technology, the driving simulator.
![[Technical Data] Driving Simulator DiM for Vehicle Performance Development](https://image.mono.ipros.com/public/product/image/ff0/2000179833/IPROS7381165759710699993.PNG?w=280&h=280)
Adopted by Ferrari and VOLVO! We pursue vehicle dynamics evaluation, handling stability, ride comfort, and control development!
This document is the material presented during the "Automotive Technology Exhibition 2014" workshop held on May 23, 2014 (Friday). In recent years, driving simulators have begun to be utilized as a method for front-loading real vehicle experiments in the development process. This document includes information about Driving Simulators (DiM) for vehicle development, which seamlessly connects the two areas of experimentation and analysis. 【Main Contents】 ■ Current Status of Driving Simulators → DS (Driving Simulator) vs DiM (Driver in Motion) → Necessity of DS ■ Driver in Motion (DiM) → Key Technologies of DiM, etc. For more details, please contact us or download the catalog.
[Video available] You can observe the heating process in real-time! Introducing the features of Cheetah EVO.
We would like to introduce the features of the YXLON "Cheetah EVO" that we have implemented. The "Reflow Simulator" allows for real-time observation of phenomena such as void behavior during soldering. It can be utilized for setting reflow conditions and selecting solder. 【Features】 ■ Ceramic heater & lamp heating ■ Target size: 40x40x20mm ■ Maximum set temperature: 350 degrees ■ Real-time observation possible ■ Can be used for setting reflow conditions and selecting solder *For more details, please refer to the PDF document or feel free to contact us.
Reproducing bipolar degradation through UV laser irradiation! Sample evaluation that normally takes 2 months can be completed in 2 days.
This product is a SiC defect inspection device that reveals defects that had not manifested without electrical current by using UV laser irradiation, thereby shortening the evaluation cycle of research and development. 【Features】 ■ UV Irradiation - Achieves uniform laser irradiation from small sizes like chips to the entire wafer. - Calculates hole concentration from epitaxial thickness and doping concentration, and proposes radiation intensity corresponding to current density. ■ PL Measurement Function - Observes defects from multiple angles at wavelengths of 380nm, 420nm, and over 700nm. - Enables identification and classification of layered defects (buffer layer, drift layer, substrate interface) using image processing technology. - Includes mapping function with coordinates of defect occurrence. * Please feel free to consider a trial measurement (free of charge) first. * For more details, please download the PDF or feel free to contact us.
Compact handheld type without a control base unit!
We would like to introduce our EMC testing equipment, the 'SESD230'. The ESD simulator (electrostatic discharge testing machine) is suitable for EMC testing of systems and devices as defined in the IEC/EN 61000-4 Part 2 standard. This test conducts resistance testing against electrostatic discharge and features two modes: air discharge and contact discharge. It comes equipped with an air discharge test probe for non-contact testing and a contact discharge test probe for contact testing. 【Features】 - Air discharge mode includes a function to display the actual discharge voltage. - Contact discharge mode has a contact control function that prevents discharge during non-contact. - Automatic testing is possible through programming. - Large and easy-to-read LCD panel. - Simple selection and setting of test content from the LCD panel. *For more details, please refer to the related links or feel free to contact us.
Reduced the evaluation period for adopting resin tapping screws by 40%. Contributes to reduced labor and costs.
This is a simulator specifically for the EVO PT plastic thread-forming screw. It shortens the testing period by 40% (based on our example) to determine whether the tapping screws for resin will be effective in your current application. By consulting with us about the necessary conditions, we will provide the simulation results free of charge. (Some paid services are available.) Please also visit the Yamashina website. ■https://www.kk-yamashina.co.jp/product/evo-pt.html
