Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.
46～60 item / All 414 items
On Semiconductor NTD20N06LT4G Transistor
Designed for low voltage, high-speed switching applications for power supply, converters, power motor control, and bridge circuits.
Simple design, high reliability! If a sense resistor is needed, the device can be connected directly.
The "CGD65A055S2" is an enhancement mode GaN-on-silicon power transistor. The ICeGaN gate technology achieves compatibility with virtually all gate drivers and controller chips for a wide range of electronic device switching frequencies. By incorporating a current detection function, a separate current detection resistor is no longer necessary. 【Features】 ■ Easy design ■ High reliability ■ 650V-27A enhancement mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.
Device loss in a no-load condition approaches zero! Achieving high current and high voltage resistance.
The "CGD65A130SH2" is an enhancement mode GaN-on-silicon power transistor that utilizes unique materials. With ICeGaN gate technology, virtually all gate drivers and controller chips are compatible. It enhances the ground plane, improves thermal performance, and simplifies thermal design. Additionally, the device can be directly soldered to a large copper area. 【Features】 ■ Easy design ■ High reliability ■ 650V-12Ae mode GaN power switch * An English version of the catalog is available for download. * For more details, please feel free to contact us.
Our top-class high-voltage products also feature high surge tolerance.
This is a lead-type PNP transistor with a maximum rating of VCEO=400V and IC=200mA. This maximum rating of VCEO is among the top class in our company, and it has higher current capability and surge tolerance compared to products in the same voltage class. In particular, the surge tolerance can withstand surge voltages more than four times that of the maximum in the same voltage class at the weakest terminal.
Guarantee the pairing of hFE and VBE for Tr1 and Tr2!
It guarantees the pairing of hFE1 and VBE, making it suitable for application in differential amplifier circuits. Additionally, it complies with AEC-Q101. It features high voltage resistance and low output capacitance, making it ideal for audio equipment.
Gate drive for high-side MOSFET, perfect for audio amplifiers!
It has high voltage resistance and low output capacity, making it ideal for audio equipment such as gate driving for high-side MOSFETs and discrete amplifiers with high power supply voltage. The composite type ensures pairing of hFE and VBE by incorporating adjacent chips, allowing for application in differential amplifier circuits and current mirror circuits.
RF power transistor for pulse radar
○ Transistors for pulse radar are available in a range from long to short pulse widths. 《For UHF Radar》 - Frequency: 400 - 500 MHz ASI Semiconductor, Inc. (ASI) is a manufacturer of RF power transistors and high-frequency diodes. In addition to a wide range of original products that are manufactured indefinitely, we also handle components aimed at replacing products from other companies. Specifically, we offer alternatives for RF power transistors primarily based on products from Motorola, Philips, and STMicroelectronics (formerly SGS Thomson). If you encounter discontinued or hard-to-find components during new designs, please contact us, and we may be able to design the desired circuit without the need for time-consuming design changes.
