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Transistor Product List and Ranking from 22 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

Transistor Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. オーエン Saitama//Electronic Components and Semiconductors
  2. Axuas Co., Ltd. Aichi//Consumer Electronics
  3. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  4. 4 イサハヤ電子 Osaka//Electronic Components and Semiconductors
  5. 5 null/null
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Transistor Product ranking

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. Power transistor alternatives and second-source products Axuas Co., Ltd.
  2. 【TOSHIBA：TD62593AFNG(5.EL)】 オーエン
  3. Introduction to EPC Space's GaN-on-Si【Space】 ジェピコ 本社、大阪支店、名古屋支店、練馬支店
  4. [Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT 一般財団法人材料科学技術振興財団　MST
  5. 4 CoolGaN 600V

Transistor Product List

16～30 item / All 414 items

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2SC4944 Dual Transistor (SOT-353)

2SC4944 Dual Transistor (SOT-353)

Replacement/second source for Toshiba dual transistor 2SC4944.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We can also provide diodes and transistors that have ceased production domestically! We accept sample requests, so please feel free to contact us. Model: 2SC4944 (SOT-353) 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *If you are looking for alternatives, please feel free to contact us.

  • JSCJ.jpg
  • Other electronic parts

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600V Enhance Mode GaN HEMTs

600V Enhance Mode GaN HEMTs

High-efficiency Gallium Nitride (GaN) HEMT optimal for switching power supplies (SMPS)

Infineon Technologies' "CoolGaN 600V Series" is realized according to a specific certification process specialized for GaN, providing a robust and reliable solution. It is part of Infineon's lineup that maximizes the advantages of GaN, based on SMD packages that deliver high performance. 【Features】 ■ 600V power devices ■ Suitable for hard-switching and soft-switching topologies ■ Optimized for power supply turn-on and turn-off ■ Cutting-edge technology that enables innovative solutions and mass production ■ High efficiency for switching power supplies (SMPS) *For more details, please refer to the PDF document or feel free to contact us.

  • Other electronic parts
  • Other semiconductors

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[Research Report] Automotive Powertrain & Power Transistor

[Research Report] Automotive Powertrain & Power Transistor

Survey Report on the Usage of Si IGBTs and SiC MOSFETs in Japan and Future Trend Predictions

This document is a research report on "On-Board Powertrain & Power Transistors." As efforts to combat global warming and achieve carbon neutrality progress, the electrification of vehicles is advancing, leading to practical applications and increased market competition among companies. High-voltage power devices (IGBT, RC-IGBT, SiC) are highlighted as key components that determine "low loss," "high reliability," and "cost" in relation to electrification. [Overview (Excerpt)] ■ Background ■ Report Structure (Table of Contents) *For more details, please refer to the PDF document or feel free to contact us.*

  • Transistor

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Power transistor 'CGD65B200S2'

Power transistor 'CGD65B200S2'

Achieving compatibility with a wide range of switching frequencies for electronic devices!

The "CGD65B200S2" is an enhancement mode GaN-on-silicon power transistor. Since there is no external component, it can be directly connected if a sense resistor is needed. It is soldered to a wide copper area for improved flatness, thermal performance, and simplified thermal design. It comes in a DFN 5x6 SMD package that supports high frequencies. 【Features】 ■ Easy design ■ High reliability ■ 650V-8.5A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

  • Transistor

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Power transistor "CGD65A130S2"

Power transistor "CGD65A130S2"

ICeGaN gate technology that achieves compatibility! Equipped with gate drivers and controller chips.

The "CGD65A130S2" is an enhancement mode GaN-on-silicon power transistor. By incorporating a current detection function, a separate current detection resistor is unnecessary. Since there is no external component, if a sense resistor is needed, the device can be connected directly. It is soldered to a wide copper area on the ground, which improves flatness, enhances thermal performance, simplifies thermal design, and supports high frequencies in a DFN 8x8 SMD package. 【Features】 ■ Easy design ■ High reliability ■ 650V-12A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

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1A built-in NPN transistor

1A built-in NPN transistor

Built-in resistance allows for miniaturization of the set and reduction of component count due to the compact surface mount design!

The latch current is large, with a collector current of 1.0A, making it optimal as a driver. The built-in type with a Zener diode has a Zener diode integrated between the collector and base, preventing the transistor itself from being destroyed by back electromotive force during solenoid drives such as motors and relays.

  • Transistor

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Junction Field Effect Transistor (Low-Frequency JFET)

Junction Field Effect Transistor (Low-Frequency JFET)

The original of voltage-controlled transistors! High input impedance and high efficiency!

JFETs have high input impedance and draw almost no input current, resulting in low loss and the ability to transmit even small signals. Therefore, they can be used in applications such as microphones and amplifiers for audio amplification, as well as for amplifying small voltage fluctuations, making them suitable for use as sensors.

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