We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for Transistor.
ipros is IPROS GMS ・ IPROS One of the largest technical database sites in Japan that collects information on.

Transistor Product List and Ranking from 21 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.

Transistor Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.

  1. オーエン Saitama//Electronic Components and Semiconductors
  2. Axuas Co., Ltd. Aichi//Consumer Electronics
  3. イサハヤ電子 Osaka//Electronic Components and Semiconductors
  4. 4 アスコット Osaka//Electronic Components and Semiconductors
  5. 5 null/null
Go to Company Ranking

Transistor Product ranking

Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.

  1. JSCJ Bipolar Transistor Axuas Co., Ltd.
  2. RF power transistor アスコット
  3. JSCJ Power Transistor Axuas Co., Ltd.
  4. High-frequency transistor イサハヤ電子
  5. Mute transistor イサハヤ電子

Transistor Product List

31～60 item / All 415 items

Displayed results
CotoMOS S117X

CotoMOS S117X

Excellent thermal conductivity with a maximum load voltage of 1700V! Capable of controlling a maximum current of 170mA.

The "CotoMOS S117X" features excellent thermal conductivity, providing high heat dissipation performance, and enables a compact and efficient design. With high-speed switching performance of a turn-on time of 0.15ms and a turn-off time of 0.04ms, it can also accommodate applications that require rapid response. Furthermore, by reducing switching losses, it achieves high operational efficiency and reduces overall energy consumption. 【Features】 ■ Excellent thermal conductivity ■ High-speed switching: TON 0.15ms, TOFF 0.04ms ■ Maximum load voltage of 1700V ■ Low on-resistance (15Ω typ.) ■ Low output capacitance: up to 20pF *For more details, please download the PDF (English version) or feel free to contact us.

  • Other electronic parts
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Silicon phototransistor KS5160

Silicon phototransistor KS5160

Surface mount type phototransistor

The KS5160 is a surface mount type phototransistor. 【Features】 - Electrode shape that automatically corrects position during reflow soldering - High sensitivity NPN phototransistor (λp: 850nm) - Package with resin lens - Lead-free solder compatible with reflow mounting It is suitable for applications such as light receiving elements for reading banknote patterns and light receiving elements for banknote pattern identification. For more details, please contact us or refer to the catalog.

  • Sensors
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Selling high-power GaN/LDMOS for 5G, WPT, and ISM bands.

Selling high-power GaN/LDMOS for 5G, WPT, and ISM bands.

5G base station uses 450W with integrated GaN HEMT, providing 55W power with 9dB backoff.

Farad has started handling products from Innogration Technologies (China), an ISO9000/ISO14000 certified manufacturer that designs and manufactures HF and high-frequency GaN/LDMOS power transistors. They have numerous achievements in semiconductor manufacturing equipment, industrial microwave amplifiers and generators, and applications such as 4G/5G communications in Japan and around the world. Aiming for high efficiency and high output, they offer a 390W GaN HEMT in the 2.45GHz band and a 100W GaN Doherty module in the 5GHz band, compatible with various packages. *For more details, please download the PDF document or feel free to contact us.

  • Amplifier
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)

[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)

You can understand the positional relationship between the gate layer, source layer, and body layer.

We investigated the shape and positional relationship of the poly-Si gate, n-type source layer, and p-type body layer of commercially available power transistors (DMOSFETs). By overlaying AFM images, we can also understand the positional relationship with the gate.

  • Contract Analysis
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

It is possible to perform magnified observation and EDX analysis at the gate destruction location identified by Slice & View.

We conducted Slice & View on a SiC transistor where the leak location was identified using a backside emission microscope, and performed magnified observation and SEM-EDX analysis at the confirmed destruction site. Bright contrast was observed in the reflected electron images, indicating the segregation of Si and Ni. It is believed that some segregation of elements such as Si and Ni occurred due to the destruction caused by the leak. Measurement methods: Slice & View, SEM-EDX, EMS Product field: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.

  • img_C0711_2.jpg
  • Contract Analysis
  • Contract measurement
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
[English Market Research Report] World Market for Small Signal Transistors

[English Market Research Report] World Market for Small Signal Transistors

"Free samples" are currently available! Please check the application method from the [PDF download] button or apply directly through the related links.

The small signal transistor market is projected to grow to 148.42 million USD from 2023 to 2028, with a CAGR of 2.94% during the forecast period. This study cites the introduction of automation in the industry as one of the key factors driving the growth of the small signal transistor market in the coming years. Additionally, the expanding demand for FinFET technology and the increasing need for enhanced communication networks are contributing to significant market demand.

  • Other services
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Semiconductor photodiode transistor

Semiconductor photodiode transistor

Advanced diffusion technology enables high performance and high reliability.

At OptoTechno, we are committed to designing and manufacturing custom-made semiconductors to meet the various needs that arise from the increasing functionality and complexity of sensors. Please feel free to consult us about miniaturization, lightweight design, and high-density integration of semiconductors. We handle everything from specifications for prototypes to mass production as a total system, which allows for further cost reductions in manufacturing expenses, including labor, component purchasing, and management costs.

  • Other semiconductors
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
XiRun manufactured diode transistors

XiRun manufactured diode transistors

A lineup of packages from axial diodes and lead products like TO-220 to the latest compact SMD products.

Yancheng XiRun Semiconductor Co., Ltd. is a semiconductor manufacturer established in 2003. It has developed as an OEM manufacturer of diodes and transistors. The company has a track record of applications in various fields, ranging from consumer products such as communication devices and home appliances to industrial and automotive uses. Currently, it is focusing on its own brand products and aims to expand its sales channels. It holds four invention patents and nine utility model patents.

  • Other electronic parts
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Automotive GaN (Gallium Nitride) power transistor

Automotive GaN (Gallium Nitride) power transistor

This is a high Vth 650V GaN (gallium nitride) power transistor that also meets the AEC-Q101 standard.

We have prepared high Vth, high reliability, and high power GaN (gallium nitride) power transistors for automotive applications.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
JSCJ Bipolar Transistor

JSCJ Bipolar Transistor

High reliability and high gain analog/switching devices | Optimal high cost-performance semiconductors as compatible and alternative products.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. JSCJ's Bipolar Junction Transistors (BJT) are high-performance semiconductor devices that can be widely used for applications ranging from analog amplification to switching. Many part numbers are compatible with BJTs from other manufacturers, allowing them to be used directly as substitutes, making them ideal for replacing existing circuits and reducing mass production costs. 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing backend (packaging and testing) outsourcing company (OSAT) after the spin-off of the discrete semiconductor manufacturing division of Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017). *We can help you find substitutes, please feel free to contact us.

  • JSCJ.jpg
  • switch
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
UMH4N Dual Digital Transistor

UMH4N Dual Digital Transistor

Many alternatives for dual digital transistors!

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We can also provide diodes and transistors that are no longer produced domestically! We accept sample requests, so please feel free to contact us. 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end processes (packaging and testing), spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) for discrete semiconductor manufacturing. *If you are looking for alternatives, please feel free to contact us.

  • JSCJ.jpg
  • Other electronic parts
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Automotive grade bipolar transistor

Automotive grade bipolar transistor

Introducing AEC-Q101 compliant bipolar transistors from the electric vehicle hub, China.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. JSCJ is focusing on expanding its lineup of AEC-Q101 compliant products in addition to transistors, MOSFETs, and diodes used in general applications. Please feel free to contact us. Example Model number: AD-2SC1623 (SOT-23) *AD- without prefix indicates consumer products (non-AEC-Q101 compliant). [About JSCJ] Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for back-end processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *Please feel free to request the latest datasheets from the manufacturer.

  • JSCJ.jpg
  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
2SA1012 Bipolar Transistor (TO-252-2L)

2SA1012 Bipolar Transistor (TO-252-2L)

Please use this as an alternative product or second source for discontinued or no longer available items.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We have many alternatives for discrete items such as transistors and MOSFETs. Please feel free to contact us. Model number: 2SA1012 (TO-252-2L package) 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing backend (packaging and testing) outsourcing company (OSAT) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *We can request the latest datasheet from the manufacturer, so please feel free to make a request.

  • JSCJ.jpg
  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
UMF5N Dual Transistor (SOT-363)

UMF5N Dual Transistor (SOT-363)

Dual transistor of bipolar transistor 2SA2018 and digital transistor DTC144E.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We can also provide diodes and transistors that have ended production domestically! We accept sample requests, so please feel free to contact us. Model: UMF5N Dual Transistor (SOT-363) About JSCJ: Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a contract manufacturer (OSAT) for semiconductor backend processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), the third largest discrete semiconductor manufacturer in the world (2017). *If you are looking for alternatives, please feel free to inquire.

  • JSCJ.jpg
  • Other electronic parts
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
NTD20N06LT4G ON SEMICONDUCTOR

NTD20N06LT4G ON SEMICONDUCTOR

On Semiconductor NTD20N06LT4G Transistor

Designed for low voltage, high-speed switching applications for power supply, converters, power motor control, and bridge circuits.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Power transistor "CGD65A055S2"

Power transistor "CGD65A055S2"

Simple design, high reliability! If a sense resistor is needed, the device can be connected directly.

The "CGD65A055S2" is an enhancement mode GaN-on-silicon power transistor. The ICeGaN gate technology achieves compatibility with virtually all gate drivers and controller chips for a wide range of electronic device switching frequencies. By incorporating a current detection function, a separate current detection resistor is no longer necessary. 【Features】 ■ Easy design ■ High reliability ■ 650V-27A enhancement mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Power transistor "CGD65A130SH2"

Power transistor "CGD65A130SH2"

Device loss in a no-load condition approaches zero! Achieving high current and high voltage resistance.

The "CGD65A130SH2" is an enhancement mode GaN-on-silicon power transistor that utilizes unique materials. With ICeGaN gate technology, virtually all gate drivers and controller chips are compatible. It enhances the ground plane, improves thermal performance, and simplifies thermal design. Additionally, the device can be directly soldered to a large copper area. 【Features】 ■ Easy design ■ High reliability ■ 650V-12Ae mode GaN power switch * An English version of the catalog is available for download. * For more details, please feel free to contact us.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
High voltage resistance VCEO=400V PNP transistor

High voltage resistance VCEO=400V PNP transistor

Our top-class high-voltage products also feature high surge tolerance.

This is a lead-type PNP transistor with a maximum rating of VCEO=400V and IC=200mA. This maximum rating of VCEO is among the top class in our company, and it has higher current capability and surge tolerance compared to products in the same voltage class. In particular, the surge tolerance can withstand surge voltages more than four times that of the maximum in the same voltage class at the weakest terminal.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Pair transistor

Pair transistor

Guarantee the pairing of hFE and VBE for Tr1 and Tr2!

It guarantees the pairing of hFE1 and VBE, making it suitable for application in differential amplifier circuits. Additionally, it complies with AEC-Q101. It features high voltage resistance and low output capacitance, making it ideal for audio equipment.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
150V high voltage bipolar transistor

150V high voltage bipolar transistor

Gate drive for high-side MOSFET, perfect for audio amplifiers!

It has high voltage resistance and low output capacity, making it ideal for audio equipment such as gate driving for high-side MOSFETs and discrete amplifiers with high power supply voltage. The composite type ensures pairing of hFE and VBE by incorporating adjacent chips, allowing for application in differential amplifier circuits and current mirror circuits.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Mute transistor

Mute transistor

Low Ron and high VEBO make it optimal as a transistor for audio mute!

- The collector-emitter saturation voltage is low, making it optimal for audio mute applications. - The VEBO is high, eliminating the need for a reverse current prevention diode. - The reverse hFE is high, allowing for audio mute of negative side signals as well. - In addition to the small surface mount package, we also offer types with built-in resistors, composite types (with 2 pieces), and buffer PNP composite types, enabling miniaturization and high-density mounting of the set.

  • Transistor
  • Transistor

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

Search Keywords Related to Transistor

COPYRIGHT © 2001-2026 IPROS CORPORATION ALL RIGHTS RESERVED.